Interuniversitair Micorelektronica Centrum (imec, Vzw)

Texas Instruments Corporation

Interuniversitair Microelektronica Centrum (imec)

Jean Paul Gueneau De Mussy

Karen Irma Maex

Gerald Beyer

Victor C Sutcliffe

Methods for the production of airgaps in semiconductor devices and devices produced using such methods are disclosed. An example semiconductor device includes a damascene stack formed using such methods. The damascene stack includes a patterned dielectric layer including an interconnect structure, where the dielectric layer is formed of a dielectric material including Si, C and O. The damascene stack also includes a converted portion of the dielectric layer, where the converted portion is adjacent to the at least one interconnect structure and has a lower carbon content than the dielectric material. The damascene stack also includes an airgap formed adjacent to the interconnect structure, the airgap being formed by removing at least part of the converted portion using an etch compound.

Methods for selective integration of airgaps and devices made by such methods

A method for the production of airgaps in a semiconductor device and device produced therefrom. The formation of airgaps is accomplished, in part, by chemically and/or mechanically changing the properties of a first dielectric layer locally, such that at least part of said first dielectric layer is converted locally and becomes etchable by a first etching substance. The local conversion of the dielectric material may be achieved during anisotropic etching of the material in oxygen containing plasma or ex-situ by performing an oxidizing step (e.g., a UV/ozone treatment or supercritical carbon dioxide with addition of an oxidizer). Formation of airgaps is achieved after creation of conductive lines and, alternatively, a barrier layer by a first etching substance. The airgaps are formed in a dual damascene structure, near the vias and/or the trenches of the damascene structure.

Method for the production of airgaps in a semiconductor device, the semiconductor device comprising a stack of layers, the stack of layers comprising at least one iteration of a sub-stack of layers.

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Elsene, Belgium

Jean Paul Gueneau De Mussy