Sofie

Instruments S.a.

Sofie Instruments

Jean Canteloup

Jacky Mathias

Roland Kleim

Device and method for three-dimensional measurements and observation of a surface layer of a thin-film structure, comprising a monitoring unit 4 which includes a video camera 12, a wide-beam illumination source 14, a narrow-beam illumination source, 20, an operation and control unit and a table for horizontal movement. The device comprises a Wollaston prism 24 arranged on the optical path of the narrow light beam, in order to obtain two narrow light beams whose polarization states are linear and mutually orthogonal, a polarizer 27 arranged on the optical axis of the Wollaston prism 24 so that the reflected narrow light beam passes through it after its travel through the Wollaston prism 24, and a detection cell 28.

Device and method for three-dimensional measurements and observation in

An illumination beam is sent onto a localized region of the surface layer of a thin-film structure which is being etched in a vacuum processing chamber. The reflective light beam is sent through a filter to the matrix sensor of a video camera, and to an optical disperser or an interference filter, a selection diaphragm, a fiber-optic cable, and an analysis slit at the input of the optical disperser or interference filter. A spectral analysis of the reflective light beam is performed to detect, by reflectometry, the transition of the following layer in a specific analysis region of the localized region.

Method and device for in situ quantification, by reflectometry, of the

A method for in situ quantification of the morphology and the thickness of a localized area of a surface layer of a thin layer structure entails directing a beam of white light and one or two lazer beams onto a sample enclosed in a vacuum treatment chamber, using a monochromator for a spectral analysis of the white light reflected by the sample and/or differential interferometry with a predetermined wavelength to determine the thickness and the instantaneous rate of variation of the thickness of the surface layer of the sample and to display a monochromatic map of the morphology of the localized area obtained by differential interferometry using a matrix camera. One application is controlling vacuum treatment of thin layer structures, especially semiconductors and integrated circuits, monitoring the morphology, thickness and rate of variation of thickness of the surface layer of the treated sample in situ and in real time.

Method of and device for in situ real time quantification of the

Assembly for observation and laser interferometric measurements of articles contained in an enclosure includes a video camera and a laser emitter unit. The laser emitter unit has two laser diodes whose beams follow the optical path of the video camera. An illumination system also follows the optical path of the video camera. The entire assembly is incorporated into a single box. The assembly is utilized for the observation and measurement of thin-film structures, in particular integrated-circuit boards.

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Monthlery, France

Jean Canteloup