Taiwan Semiconductor Manufacturing Comp. Ltd.

Je Wang

Han-Chung Chen

Chiarn-Lung Lee

Ji-Chung Huang

Ying-Shih Huang

Chung-En Hsu

A method for forming BPSG layers over PECVD silicon oxide layers by atmospheric chemical vapor deposition using ozone and TEOS is described. The method prevents the formation of voids in deep depressions such as are found between metallization lines or closely spaced polysilicon structures in flash memory integrated circuits. The method deposits the BPSG layer at ozone/TEOS flow rate ratio of 12:1 or greater. The voids are caused by excessive shrinkage of the BPSG which produces high stresses in the depressions during planarization reflow causing the BPSG to become detached from the underlying silicon oxide. The voids are measured as line defects in a double polysilicon flash memory circuit. The high ozone/TEOS ratio increases the density of the as-deposited BPSG layer which in turn produces reduced shrinkage of the layer during the subsequent planarization reflow. A correlation is found between BPSG shrinkage and line yield.

Method for preventing delamination of APCVD BPSG films

A method for forming upon a microelectronics layer upon a substrate employed within a microelectronics fabrication a silicon oxide dielectric layer with enhanced density and reduced mobile species, ionic concentration and ionic mobility. There is provided a substrate employed within a microelectronics fabrication. There is formed upon the substrate a blanket undoped silicon oxide glass dielectric layer employing ozone assisted near atmospheric pressure thermal chemical vapor deposition (APCVD) from tetra-ethyl-ortho-silicate (TEOS) vapor, wherein a high flow rate ratio of ozone gas to TEOS vapor affords enhanced density and reduced mobile species, ionic concentration and ionic mobility in the blanket silicon oxide glass dielectric layer. There is then formed a blanket boron-phosphorus doped silicon containing glass dielectric layer over the substrate employing ozone assisted near atmospheric pressure thermal chemical vapor deposition (APCVD) to complete the dielectric layer. The blanket undoped silicon oxide glass dielectric layer serves as a barrier to diffusion of mobile species from the doped silicon containing glass dielectric layer or other dielectric layers to attenuate hot carrier injection effects, which reduces degradation of device reliability.

Formation of dielectric layer employing high

A new method of aluminum plug metallization in the manufacture of an integrated circuit device is described. An insulating layer is provided over the surface of a semiconductor substrate. At least one contact opening is provided through the insulating layer to the semiconductor substrate. A barrier metal layer is deposited over the surface of the insulating layer and within the contact opening. An aluminum layer is sputter deposited over the barrier metal layer and within the contact opening wherein a void is left within the contact opening. The aluminum layer is covered with a dielectric layer wherein the expansion coefficient of the dielectric layer is smaller than the expansion coefficient of the aluminum layer. The aluminum layer is reflowed using rapid thermal annealing wherein the overlying dielectric layer forces the aluminum layer to fill the contact opening completing the metallization in the fabrication of an integrated circuit device.

Aluminum plug process

A method to prevent volcano effect in tungsten plug deposition is described. The method is applied to both the contact plugs as well as the via plugs. For these purposes, the use of a nitrogen (N.sub.2) plasma of a specific recipe is introduced. It is shown that the presence of the nitrogen plasma improves the titanium nitride (TiN) barrier layer through annealing, and nitrogen stuffing of the grain boundaries. In addition, a titanium (Ti) layer must be used prior to the deposition of the TiN layer in order to improve adhesion. This step also enhances the titanium nitride barrier, and reduces the contact resistance (R.sub.c) of the contact-plugs as well. Finally, the nitrogen plasma process and the metal deposition can be done in one and the same equipment.

Growing community of inventors

Hsin-chu, Taiwan

Je Wang