Applied Materials, Inc.

Other

Sokudo Co., Ltd.

Lifeline Tech, Inc.

Jay D Pinson, Ii

Tetsuya Ishikawa

Kenneth S Collins

Juan Carlos Rocha-Alvarez

Craig A Roderick

John R Trow

Michael Robert Rice

Jeffrey C Hudgens

Charles T Carlson

William Tyler Weaver

Mohsen Salek

Helen R Armer

Robert B Lowrance

Harald Herchen

Leon Volfovski

David H Quach

Chongyang Wang

Rick J Roberts

John A Backer

David Walter Groechel

Jeffrey S Marks

Masato M Toshima

Chan-Lon Yang

Peter R Keswick

Hiroji Hanawa

Shankar Venkataraman

Abdul Aziz Khaja

Zheng John Ye

Brian C Lue

Adib M Khan

Ganesh Balasubramanian

Douglas A Buchberger, Jr

Mohamad A Ayoub

Kaushik Comandoor Alayavalli

Jerry Yuen-Kui Wong

Lawrence Chang-Lai Lei

Nitin K Ingle

Bok Hoen Kim

Qiwei Liang

Gerald Z Yin

Kwangduk Douglas Lee

Arulkumar P Shanmugasundram

Jang-Gyoo Yang

Sungwon Ha

Hanish Kumar Panavalappil Kumarankutty

Viktor Shel

Rick Kustra

Robert P Hartlage

Dmitry Lubomirsky

Abhijit Basu Mallick

Fred Conrad Redeker

Kallol Bera

Jason M Schaller

Lawrence C Lei

Hari K Ponnekanti

Ren-Guan Duan

Martin Jay Seamons

Canfeng Lai

Bo Qi

DongQing Li

Jerry Yuen Wong

Badri N Ramamurthi

Kirby Hane Floyd

Huiyuan Wang

Troy S Detrick

Daemian Raj

Rupankar Choudhury

Sathya Swaroop Ganta

Akshay Dhanakshirur

Thuy Britcher

Ying Ma

Jennifer Y Sun

Andrew Nguyen

Shijian Li

Brian J Brown

Eric Andrew Englhardt

Thomas H Osterheld

Jianhua Zhou

Mukund Srinivasan

Prashant Kumar Kulshreshtha

Doyle E Bennett

Jingmei Liang

Sean M Seutter

Wendell Glenn Boyd, Jr

Romuald Nowak

Gerald Zheyao Yin

Bhaskar Kumar

Sudhir R Gondhalekar

Juan Carlos Rocha

Luke W Bonecutter

Xing Lin

Vinayak Vishwanath Hassan

Khokan Chandra Paul

Anup Kumar Singh

Benjamin A Bonner

Manus K Wong

Swayambhu Prasad Behera

Steve S Hongkham

Kaveh F Niazi

Kenneth D Smyth

A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Showerhead design to control stray deposition

Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

Electrostatic chuck with improved temperature control

Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Batch curing chamber with gas distribution and individual pumping

A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Magnetic-material shield around plasma chambers near pedestal

Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50&#xb0; C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about &#x2212;500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

Deposition of low-stress boron-containing layers

Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50&#xb0; C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sphybridized bonds.

Deposition of low-stress carbon-containing layers

A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Plasma processing using multiple radio frequency power feeds for improved uniformity

A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

Electrode assembly

Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first RPS coupled to a lid of the processing chamber and a second RPS coupled to a side wall of the processing chamber. The first RPS is utilized for delivering deposition radicals into a processing region in the processing chamber and the second RPS is utilized for delivering cleaning radicals into the processing region. The processing chamber further includes a radical delivery ring disposed between a showerhead and a substrate support for delivering cleaning radicals from the second RPS into the processing region. Having separate RPSs for deposition and clean along with introducing radicals from the RPSs into the processing region using separate delivery channels minimizes cross contamination and cyclic change on the RPSs, leading to improved deposition rate drifting and particle performance.

Integration of dual remote plasmas sources for flowable CVD

Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.

Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates

A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.

Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same

Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100&#xb0; C. during substrate processing.

Integrated substrate temperature measurement on high temperature ceramic heater

A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime

Growing community of inventors

San Jose, CA, United States of America

Jay D Pinson, Ii