Novellus Systems Incorporated

Lam Research Corporation

Jasmine Lin

Anand Chandrashekar

Tsung-Han Yang

Rohit Khare

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.

Tungsten feature fill with nucleation inhibition

Provided herein are methods of tungsten nitride (WN) deposition. Also provided are stacks for tungsten (W) contacts to silicon germanium (SiGe) layers and methods for forming them. The stacks include SiGe/tungsten silicide (WSi)/WN/W layers, with WSiproviding an ohmic contact between the SiGe and WN layers. Also provided are methods for reducing fluorine (F) attack of underlying layers in deposition of W-containing films using tungsten hexafluoride (WF). Apparatuses to perform the methods are also provided.

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San Jose, CA, United States of America

Jasmine Lin