Planar Systems, Inc.

Beneq Oy

Planar Systems Oy

Jarmo Maula

Kari Härkönen

Teemu Lang

Hannu Leskinen

Pekka Kuosmanen

Bradley J Aitchison

Pekka T Soininen

Mikko Soderlund

Anguel N Nikolov

Runar Olof Ivar Törnqvist

Martti Sonninen

Kari Haerkoenen

Kari HÄRKÖNEN

The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus comprises a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Apparatus, method and reaction chamber

The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

A method for forming an electrically conductive oxide film () on a substrate (), the method comprising the steps of, bringing the substrate () into a reaction space, forming a preliminary deposit on a deposition surface of the substrate () and treating the deposition surface with a chemical. The step of forming the preliminary deposit on the deposition surface of the substrate () comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space. The step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal. The steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film () of electrically conductive oxide is formed on the substrate ().

Method for forming an electrically conductive oxide film, an electrically conductive oxide film, and uses for the same

The invention relates to a method and an apparatus for coating one or more objects () by exposing an object () to alternately repeating surface reactions of two or more gaseous precursors. The apparatus comprises a reaction chamber (), means for forming at least one distinct precursor region inside the reaction chamber, and means for causing translational, essentially mechanically unsupported and unsuspended, motion of an object () inside the reaction chamber, relative to the reaction chamber, for bringing the surface of the object () into contact with a gaseous precursor, the means for causing the translational motion comprising means for moving the object () essentially through the at least one distinct precursor region inside the reaction chamber.

Method and apparatus for coating

The present invention relates to a method for enhancing uniformity of metal oxide coatings formed by Atomic Layer Deposition (ALD) or ALD-type processes. Layers are formed using alternating pulses of metal halide and oxygen-containing precursors, preferably water, and purging when necessary. An introduction of modificator pulses following the pulses of the oxygen-containing precursor affects positively on layer uniformity, which commonly exhibits gradients, particularly in applications with closely arranged substrates. In particular, improvement in layer thickness uniformity is obtained. According to the invention, alcohols having one to three carbon atoms can be used as the modificator.

Method in depositing metal oxide materials

The invention relates to a multilayer material deposited by ALD. A multi-layer structure of a high refractive index material is deposited on a substrate using ALD at a temperature below about 450&#xb0; C. Advantageous results are obtained when a high refractive index material A is coated with another material B after a certain thickness of material A has been achieved. Thus, the B barrier layer stops the tendency for material A to crystallize. The amorphous structure gives rise to less optical loss. Further, the different stress nature of materials A and B may be utilized to achieve a final optical material with minimal stress. The thickness of each material B layer is less than that of the adjacent A layer(s). The total effective refractive index of the high refractive index material A+B being shall be greater than 2.20 at a wavelength of 600 nm. Titanium oxide and aluminium oxide are preferred A and B materials. The structure is useful for optical coatings.

Multilayer material and method of preparing same

A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures. The resulting film conforms to surface structures having varying complex dimensions.

Conformal coatings for micro-optical elements, and method for making the same

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

Diaphragm valve for atomic layer deposition

A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Precursor material delivery system for atomic layer deposition

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Diaphragm valve with reliability enhancements for atomic layer deposition

A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

High-speed diaphragm valve for atomic layer deposition

A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.

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Espoo, Finland

Jarmo Maula