Asm IP Holding B.v.

Jani Hämäläinen

Mikko Ritala

Markku Leskelä

Miia Mäntymäki

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NHand a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as Oas the etching reactant and an inert gas such as Nto remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

Atomic layer deposition and etching of transition metal dichalcogenide thin films

A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

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Epsoo, Finland

Jani Hämäläinen