Samsung Electronics Co., Ltd.

Jangseok Choi

Hongzhong Zheng

Dimin Niu

Mu-Tien Chang

Sun Young Lim

Indong Kim

Hyun-Joong Kim

Won-hyung Song

Wonhyung Song

Taekwoon Kim

Craig Hanson

Hosung Yoon

Yoojung Lee

Hyunjoong Kim

Dongyang Lee

Younghoe Kim

Joonseok Choi

A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Coordinated in-module RAS features for synchronous DDR compatible memory

A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

DRAM assist error correction mechanism for DDR SDRAM interface

A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Asynchronous communication protocol compatible with synchronous DDR protocol

A memory system includes a memory module and a memory controller. The memory module includes data chips that store data and are assigned to a first sub-channel that generates a first code word or a second sub-channel that generates a second code word, where the first code word and the second code are used to fill a single cache line. The memory controller, upon detection of a hard-fail data chip among the data chips, copies data from the hard-fail data chip to the ECC chip, releases mapping between the hard-fail data chip and corresponding I/O, and defines new mapping between the ECC chip and the corresponding I/O pins.

Memory module with reduced ECC overhead and memory system

A memory module includes first memory chips, each having a first input/output width, and configured to store data, a second memory chip having a second input/output width and configured to store an error correction code for correcting an error in the data, and a driver circuit configured to receive a clock signal, a command, and an address from a memory controller and to transmit the clock signal, the command, and the address to the first memory chips and the second memory chip. An address depth of each of the first memory chips and an address depth of the second memory chip are different from each other.

Memory module, error correction method of memory controller controlling the same, and computing system including the same

A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

A memory controller configured to control a memory module including a plurality of memory devices which constitute a first channel and a second channel includes an error correction code (ECC) engine, and a control circuit configured to control the ECC engine. The ECC engine is configured to generate a codeword including a plurality of symbols by adaptively constructing, based on device information including mapping information, each of the plurality of symbols from a predetermined number of data bits received via a plurality of input/output pads of each of the plurality of memory devices, and transmit the codeword to the memory module. The mapping information indicates whether each of the plurality of input/output pads is mapped to the same symbol among the plurality of symbols or different symbols among the plurality of symbols. Each of the plurality of symbols corresponds to a unit of error correction of the ECC engine.

Memory controllers, memory systems including the same and memory modules

A memory controller is disclosed. The memory controller may include read circuitry to request a value at an address stored in a plurality of data chips, parity circuitry to calculate a parity from original data received from the plurality of the data chips, pollution pattern analysis circuitry to compare the parity with a plurality of pollution patterns programmed into the plurality of the data chips to identify a data chip with an error, and error correction circuitry to correct the error in the original data received from the identified data chip with the error.

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Campbell, CA, United States of America

Jangseok Choi