Asm IP Holding B.v.

Asm International N.v.

Asm America, Inc.

Materialise N.v.

Imec Vzw

Asm IP Holdings B.v.

Renesas Technology Corp.

Imec

Katholieke Universiteit Leuven

Interuniversitair Micro-elektronica Centrum Vzw

Renesas Electronics Corporation

Hoya Corporation

Jan Willem Maes

Qi Xie

David Kurt De Roest

Michael Eugene Givens

Suvi P Haukka

Delphine Longrie

Tom E Blomberg

Vladimir Machkaoutsan

Fu Tang

Dieter Pierreux

Werner Knaepen

Eva E Tois

Krzysztof Kachel

Han Wang

Eric James Shero

Chiyu Zhu

Varun Sharma

Elina Färm

Petri Raisanen

Charles Dezelah

Raija H Matero

Hidemi Suemori

Jacob Huffman Woodruff

Tom Cluckers

Krzysztof Kamil Kachel

Viljami J Pore

Ivo Johannes Raaijmakers

Marko J Tuominen

Antti Niskanen

Bert Jongbloed

Hessel Sprey

Shaoren Deng

Timo Asikainen

Julian Hsieh

Shinya Iwashita

Dai Ishikawa

Kunitoshi Namba

Shang Chen

Oreste Madia

Takahiro Onuma

Toshiharu Watarai

Linda Lindroos

Harald Profijt

Kees Van Der Jeugd

Lucia D'Urzo

Mohith E Verghese

Andrea Illiberi

Dong Li

Roel Gronheid

Glen Wilk

Chang-Gong Wang

Xiaoqiang Jiang

Jerry Peijun Chen

Brennan Milligan

Robin Roelofs

Kai-Erik Elers

Hannu Huotari

Giuseppe Alessio Verni

Petri Räisänen

Cornelius A Van Der Jeugd

Steven Marcus

Arjun Singh

Timothee Blanquart

Yuet Mei Wan

Joris Van Deun

Christophe Pomarede

Sebastian E Van Nooten

Robert Huggare

Pekka T Soininen

Takashi Hatanaka

Christophe F Pomarede

Peijun Chen

Michael Givens

Annelies Delabie

David Kohen

Kiran Shrestha

René Henricus Jozef Vervuurt

Ren-Jie Chang

Maarten Stokhof

Daniele Chiappe

Jiyeon Kim

Peter Marc Zagwijn

Jacobus Johannes Beulens

Marinus J De Blank

Pauline Calka

Viraj Madhiwala

Ruben Haverkort

Mathieu Caymax

Hari Pathangi Sriraman

Mohd Azman Mohd Ismail

Marinus Josephus De Blank

Yashuhiro Shimamoto

René De Blank

Johan Swerts

Hilde De Witte

Tsai Wilman

Alireza Parandian

Saima Ali

Anirudhan Chandrasekaran

A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

Method for forming an ultraviolet radiation responsive metal oxide-containing film

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Methods and systems for filling a gap

Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Transition metal nitride deposition method

The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

Transition metal deposition processes and deposition assembly

Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

Deposition of organic films

The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

Method of forming an enhanced unexposed photoresist layer

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

Method of cleaning a surface

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

Selective passivation and selective deposition

Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and Hplasma, a second Ar plasma and an etchant.

Selective deposition of SiOC thin films

A sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Atomic layer deposition of III-V compounds to form V-NAND devices

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Transition metal deposition method

Growing community of inventors

Wilrijk, Belgium

Jan Willem Maes