Basf Se Corporation

Georg-august-universität Göttingen

Jan Gerkens

Hagen Wilmer

Torben Adermann

Sven Schneider

Kerstin Schierle-Arndt

Daniel Loeffler

Falko Abels

Carolin Limburg

Christian Volkmann

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, Ris an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, Ris an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

Process for the generation of thin inorganic films

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R, Rare an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R, R, and Rare an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3. 

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Goettingen, Germany

Jan Gerkens