Semes Co., Ltd.

Jamyung Gu

Jong Hwan An

Jong-Hwan An

Shin-Woo Nam

Ogsen Galstyan

Goon Ho Park

Young-Bin Kim

Shant Arakelyan

Sang-Kee Lee

Harutyun Melikyan

Jun Ho Lee

Saewon Na

Taehoon Jo

Jungmo Gu

Young Bin Kim

A substrate treating apparatus includes a chamber having a process space therein, a substrate support unit that supports a substrate in the process space, a gas supply unit that supplies gas into the process space, and a plasma generation unit that generates plasma from the gas, wherein the substrate support unit includes a substrate support part that supports the substrate, a focus ring that surrounds the substrate support part, an insulator located below the focus ring and having a groove formed therein, an electrode provided in the groove formed in the insulator, and an impedance controller that is connected with the electrode and that adjusts impedance of the electrode, and the impedance controller includes a resonance control circuit that adjusts a maximum value of current applied to the electrode and an impedance control circuit that controls an incidence angle of plasma ions in an edge region of the substrate.

Apparatus and method for treating substrate

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Substrate treating apparatus and substrate treating method

The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more.

A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.

Plasma generation apparatus, substrate treating apparatus including the same, and control method for the plasma generation apparatus

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Chungcheongnam-do, South Korea

Jamyung Gu