Siltronic Ag

James Moreland

Wilfried Von Ammon

Reinhold Wahlich

Brian Murphy

Rüdiger Schmolke

SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is &#x2266;20 nm in thickness, has an HF density of &#x2266;0.1/cm, and a surface roughness of 0.2 nm RMS.

Film or layer of semiconducting material, and process for producing the film or layer

The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.

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Portland, OR, United States of America

James Moreland