Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Other

James Michael Mori

James W Thackeray

James F Cameron

Roger F Sinta

George W Orsula

Timothy G Adams

Edward K Pavelchek

Rosemary Bell

Thomas M Zydowsky

Robin L Miller-Fahey

Wu-Song S Huang

Wayne Martin Moreau

Hiroshi Ito

Gary Ganghui Teng

Kuang-Jung Chen

Manuel doCanto

Ronald Anthony DellaGuardia

Yoshihiro Yamamoto

Guangyu Xu

Manual doCanto

The invention provides positive-acting chemically-amplified photoresist compositions that can provide excellent lithographic performance as well as significantly enhanced storage stability. In one aspect, photoresist compositions are provided that comprise a solvent that is free of hydroxy groups (i.e. non-hydroxylic solvent), a resin binder and a photoactive compound that exhibits enhanced and long-term solubility in the solvent. In a further aspect, resists are provided that are formulated in a hydroxyl-containing solvent such as ethyl lactate and that contains a sulfonium salt photoactive compound that includes a sulfonate counter anion that can provide enhanced storage stability for the resist.

Photoresist compositions and methods and articles of manufacture comprising same

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Dyed photoresists and methods and articles of manufacture comprising same

The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.

Photoresist compositions comprising blends of photoacid generators

New methods and compositions are provided that enable application and processing of photoresist as thick coating layers, e.g. at dried layer (post soft-bake) thicknesses of in excess of 2 microns. Resists can be imaged at short wavelengths in accordance with the invention, including 248 nm.

Thick film photoresists and methods for use thereof

The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.

Photoresist comprising blends of photoacid generators

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly for deep UV applications. The ARCs of the invention in general comprise a crosslinker and novel ARC resin binders that effectively absorb reflected deep UV exposure radiation.

Antireflective coating compositions

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Boston, MA, United States of America

James Michael Mori