Intermolecular, Inc.

Globalfoundries Inc.

James Mavrinac

Olov B Karlsson

Anh Duong

John S Foster

Sean Barstow

Usha Raghuram

Bei Li

Clemens Fitz

The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Process to remove Ni and Pt residues for NiPtSi application using chlorine gas

A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.

Method for cleaning platinum residues on a semiconductor substrate

The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.

Process to remove Ni and Pt residues for NiPtSi applications

Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas

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San Jose, CA, United States of America

James Mavrinac