Intel Corporation

Other

James M Powers

Jack T Kavalieros

Matthew V Metz

Benjamin Chu-Kung

Robert S Chau

Gilbert W Dewey

Niloy Mukherjee

Seung Hoon Sung

Kevin O'Brien

Sanaz Kabehie Gardner

Robert P Meagley

Niti Goel

Van H Le

Sansaptak W Dasgupta

Michael D Goodner

Tian-An Chen

Pragyansri Pathi

Marko Radosavljevic

Willy Rachmady

Rafael Rios

Seiyon Kim

Ashish Agrawal

Peter G Tolchinsky

Loren A Chow

Marc C French

Huey-Chiang Liou

Florence Eschbach

Fu-Chang Lo

Sherry R Taft

Mark R Lemay

Alexander (Alex) Tregub

A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a buffer material on a semiconductor substrate, the buffer material including a semiconductor material including a different lattice structure than the substrate; forming a blocking material on the buffer material, the blocking material including a property to inhibit carrier leakage; and forming a transistor device on the substrate. An apparatus including a non-planar multi-gate device on a substrate including a transistor device including a channel disposed on a substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage.

Offstate parasitic leakage reduction for tunneling field effect transistors

Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a 'buffer' material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

Methods and structures to prevent sidewall defects during selective epitaxy

Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the devices formed thereby are described. In one embodiment, the method includes providing a substrate having a top surface with a lattice constant and depositing a first layer on the top surface of the substrate. The first layer has a top surface with a lattice constant that is different from the first lattice constant of the top surface of the substrate. The first layer is annealed and polished to form a polished surface. A second layer is then deposited above the polished surface.

Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby

A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

Forming semiconductor structures

An embodiment of the present invention includes a technique to improve stability of a pellicle. The pellicle is pre-baked at a predetermined temperature substantially below a glass transition temperature. The pre-baked pellicle is purged with an inert gas. The purged pellicle is radiated by a radiation at a wavelength. In another embodiment, a chamber is sealed with a pellicle membrane which divides the chamber into first and second compartments. The chamber has an inflow opening in the first compartment and an outflow opening in the second compartment. A gas is injected into the inflow opening and penetrates the pellicle membrane to the outflow opening. In another embodiment, the chamber has first inflow and outflow openings and second inflow and outflow openings in the first and second compartments, respectively. A first gas is injected into the first inflow opening and a second gas into the second inflow opening. The first and second gases have a permeability difference. The first gas penetrates the pellicle membrane to the second outflow opening.

Radiation stability of polymer pellicles

A method of loading individual caseless cartridges sequentially into a firearm firing chamber by the expansive force of a small detonation in the magazine focused locally on the current top cartridge in a magazine without damaging remaining cartridges. Small individual propelling charges containing an igniter microchip located in the magazine behind each cartridge provides the loading thrust. More energetic charges containing igniter microchips are imbedded in the cartridges to fire the cartridge in the firing chamber at will.

Firearm or repeating pyrotechnic mortar that advances cartridges from a magazine into a firing chamber by a chemical detonation or steam explosion

A method for spans launched, as self-supporting bridge beams, approximately horizontally from support structure to successive support structure without significant temporary false work or scaffolding between permanent support structures. Bridge spans assembled atop previously constructed roadbed are launched individually onto supporting structures or columns spaced at span widths beyond said roadbed. 3 individual spans are placed or assembled with a longitudinal girder into a unit atop the roadbed surface, the assembly becoming a launching truss. Load moving air cushion pallets are placed upon the roadbed beneath and before the 3 spans. The launching truss moves forward one span length beyond the roadbed end placing one span and assembled girder in cantilever. That span is disconnected from the truss and emplaced upon supporting structures, at eventual roadbed level, beyond the previously constructed roadbed. Repeated, the process completes the bridge.

Method of launching bridge spans in bridge construction

Exposure systems may use pellicles made of perfluoropoly-ether. These materials may exhibit reduced darkening upon repeated exposures compared to other materials.

Using perfluoropoly-ethers to form pellicles

A bridge for long, deep water crossings is supported between spans by narrow, transverse, semi-submersible pontoons. The pontoons are oriented to present minimal cross section to tidal currents under the bridge. The pontoons are pivotally attached to the bridge allowing them to be turned a few degrees right or left as tidal currents change. During fabrication, a module of bridge deck/roadway can be assembled for transport upon each pontoon deck. After remote fabrication two or more complete bridge modules can be linked pontoon-to-pontoon into a seaworthy vessel that can be towed to the erection site. At site the roadway modules are rotated transverse to the pontoon, elevated to final position and joined to other modules, completing the bridge.

Bridges assembled from ocean-mobile pontoon bridge modules

A method is disclosed of forming an air gap using etch back of an inter layer dielectric (ILD) with self-alignment to metal pattern. The method entails forming a first metallization layer deposited on a first dielectric, forming a second metallization layer deposited on a second dielectric, wherein the second metallization layer is spaced apart from the first metallization layer, forming a sacrificial ILD between the first and second metallization layers, forming a diffusion layer over the first and second metallization layers and over the sacrificial ILD, and removing the sacrificial ILD to form an air gap between the first and second metallization layers. This method is particular applicable for dual copper damascene processes.

Semiconductor device formed with an air gap using etch back of inter layer dielectric (ILD)

Pellicles separated by a distance sufficient to allow a purge gas help repair damage to at least one of the pellicles caused by exposure to an incident radiation and allowing at least a minimum amount of radiation to reach a semiconductor wafer sufficient to perform a desired photolythography process. Moreover, the two pellicles separated by a sufficient distance such that a dispersed purge gas dispersed between the pellicles will not absorb more than an amount of energy from the incident radiation so as to prevent a desired amount of the radiation to reach a semiconductor wafer located a certain distance away from the pellicles.

Apparatus for reducing pellicle darkening

Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

Forming chemical vapor depositable low dielectric constant layers

Site cast or pre-cast columns aligned and braced by pre-cast pre-stressed floor beams are used to erect a concrete skeleton structure for a building. The ends of the horizontal beams are imbedded in the columns at floor levels to stabilize and complete the skeleton. The horizontal beams are pre-stressed and are cast with passages that permit insertion of continuous reinforcing tendons into a network throughout each floor level. The tendons are subsequently post-tensioned so to tie the beams together and to the columns to reinforce the skeleton. Slab drop-forms starting at the roof and progressing floor-by-floor downward allow monolithic post-tensioned floor slabs to be cast to tie the skeleton into a unitary structure. The beams are usually integrated (buried) into each monolithic floor slab, keyed, doweled and bonded with bonding agent at cold joints to become a part of the slab structure.

Column and beam construction and method

The present invention discloses a method of providing a substrate, the substrate having a first metal line and a second metal line isolated horizontally by a dielectric; forming an etch stop layer over the substrate; reducing thickness of the etch stop layer over the first metal line, leaving thickness unchanged over the second metal line; forming an interlayer dielectric (ILD) over the etch stop layer; and removing the ILD over the second metal line. The present invention further discloses a structure that includes a substrate; a first metal line and a second metal line located over the substrate; a dielectric located over the substrate adjacent to the first metal line and the second metal line; an etch stop layer located over the first metal line, the second metal line, and the dielectric, the etch stop layer being thicker over the second metal line; and a via located over the thicker etch stop layer over the second metal line.

Growing community of inventors

Beaverton, OR, United States of America

James M Powers