International Business Machines Corporation

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James L Speidell

Steven Alan Cordes

Peter Alfred Gruber

John Ulrich Knickerbocker

James Patrick Doyle

James F Ziegler

Carlos Juan Sambucetti

Praveen Chaudhari

David Hirsch Danovitch

Michael James Cordes

Robert P Kuder, Ii

Stephen Roux

Kevin K Chan

Evan G Colgan

Michael A Gaynes

Sri Muthuthamby Sri-Jayantha

Jeffrey Donald Gelorme

David L Questad

Frank Louis Pompeo

Thomas Edward Lombardi

Rajesh S Patel

Son K Tran

Marie-Claude Paquet

Daniel J Littrell

Sampath Purushothaman

Laertis Economikos

Jerome J Cuomo

Uttam Shymalindu Ghoshal

Alessandro Cesare Callegari

James Andrew Lacey

Mitchell S Cohen

Daniel George Berger

Frank Benjamin Kaufman

Robert Lee Melcher

Pedro A Chalco

Guy Paul Brouillette

Matthew F Cali

Margaret Paggi Manny

Timothy Joseph Dalton

Christopher Vincent Jahnes

Leathen Shi

Mahesh Govind Samant

Shui-Chih Alan Lien

S Jay Chey

James M Harper

William K Hogan

John J Ritsko

Matthew J Farinelli

Leena Paivikki Buchwalter

Sherif Ahmed Goma

Jennifer L Lund

James McKell Edwin Harper

Errol Wayne Robinson

Egon Max Kummer

Joachim Stohr

Shui-Chin Alan Lien

Christopher Jhanes

Joseph Peter Zinter

Jae-Woong Nah

Bucknell Chapman Webb

Kevin Shawn Petrarca

Robert J Von Gutfeld

Minhua Lu

Wayne John Howell

Sudipta Kumar Ray

Daniel Michael Kuchta

Thomas George Ference

Harold R Kaufman

Scott Marshall Mansfield

Jeannine Madelyn Trewhella

Rodney A Kendall

Stanley Joseph Whitehair

Glen Walden Johnson

C Richard Guarnieri

Eileen Ann Galligan

Dianne L Lacey

Kurt A Smith

James T Yeh

Kenneth D Murray

Juan R Maldonado

Charles R Guarnieri

John R Lankard

Hajime Seki

Vaughn P Gross

Michael Stuart Gordon

John M Warlaumont

Gregory John Clark

Steven J Kirch

David John Pinckney

George A Sefler

Rick J Heh

Andrew Bessy

Bruce A Hoenig

Kevin Shawn Petraraca

Vincent Di Milia

Margaret A Frisch

David Dimilia

Joseph P Zinter

A method and apparatus for bonding a processor wafer with a microchannel wafer/glass manifold to form a bonded wafer structure are provided. A glass fixture is also provided for protecting C4 solder bumps on chips disposed on the processor wafer. When the glass fixture is positioned on the processor wafer, posts extending from the glass fixture contact corresponding regions on the processor wafer devoid of C4 solder bumps, so that the glass fixture protects the C4 solder bumps during wafer bonding. The method involves positioning the processor wafer/glass fixture and the microchannel wafer/glass manifold in a metal fixture having one or more alignment structures adapted to engage corresponding alignment elements formed in the processor wafer, glass fixture and/or glass manifold. The metal fixture secures the wafer components in place and, after melting solder pellets disposed between the processor wafer/glass fixture and microchannel wafer/glass manifold, a bonded wafer structure is formed.

Method and apparatus of processor wafer bonding for wafer-scale integrated supercomputer

An interconnect structure that includes a component circuit board containing a plurality of electrical components, and a wafer connector assembly. The wafer connector assembly includes a plurality of interconnect circuit boards that are in electrical connection with the components circuit board through a plurality of rows of solder joints, the plurality of interconnect circuit boards having a connection end including at least one contact. An adhesive is present structurally reinforcing at least a row of the solder joints that is proximate to the connection end of the plurality of interconnect circuit boards of the wafer assembly.

Method and apparatus for strain relieving surface mount attached connectors

The present invention allows for direct chip-to-chip connections using the shortest possible signal path.

Direct edge connection for multi-chip integrated circuits

A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.

Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters

A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material. The method of removal of the sacrificial material is by an oxygen plasma or an anneal in an oxygen containing ambient. A method of vacuum encapsulation of the MEMS resonator or filter is provided through means of a cavity containing the MEMS device, filled with additional sacrificial material, and sealed. Access vias are created through the membrane sealing the cavity; the sacrificial material is removed as stated previously, and the vias are re-sealed in a vacuum coating process.

A system, method, and apparatus for injection molding conductive bonding material into a plurality of cavities in a surface are disclosed. The method comprises aligning a fill head with a surface. The mold includes a plurality of cavities. The method further includes placing the fill head in substantial contact with the surface. At least a first gas is channeled about a first region of the fill head. The at least first gas has a temperature above a melting point of conductive bonding material residing in a reservoir thereby maintaining the conductive bonding material in a molten state. The conductive bonding material is forced out of the fill head toward the surface. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.

Fill head for injection molding of solder

A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.

Rotational fill techniques for injection molding of solder

A system, method, and device for applying conductive bonding material to a substrate are disclosed. The method includes providing conductive bonding material in a plurality of cavities of a mold. A total number of cavities in the plurality of cavities being greater than a total number of at least one conductive pad of a circuit supporting substrate corresponding to the mold. The conductive bonding material in the mold is heated to a reflow temperature of the conductive bonding material. At least one wettable surface is placed in substantial contact with the heated conductive bonding material in at least one cavity. The mold and the corresponding circuit supporting substrate are brought in close proximity to each other such that the heated conductive bonding material in at least one cavity comes in contact with at least one conductive pad of the corresponding circuit supporting substrate.

Universal mold for injection molding of solder

A system provides solder into cavities in a circuit supporting substrate. The system places a fill head in substantial contact with a circuit supporting substrate. The circuit supporting substrate includes at least one cavity. A linear motion or a rotational motion is provided to at least one of the circuit supporting substrate and the fill head while the fill head is in substantial contact with the circuit supporting substrate. Solder is forced out of the fill head toward the circuit supporting substrate. The solder is provided into the at least one cavity contemporaneous with the at least one cavity being in proximity to the fill head. The system brings a second circuit supporting substrate in close proximity to the circuit supporting substrate, at least one receiving pad on the second circuit supporting substrate substantially contacts the conductive bonding material of the at least one cavity.

Conductive bonding material fill techniques

A system and method are provided for injection molding conductive bonding material into a plurality of cavities in a mold within a vacuum chamber. A mold and a fill head are located within a vacuum chamber, wherein the mold includes a plurality of cavities. A vacuum is created within the vacuum chamber, thereby removing air from the chamber and from the cavities. Optionally, rotational motion is provided to at least one of the mold and the fill head while the fill head is in substantial contact with the mold. Conductive bonding material is forced out of the fill head toward the mold, and into at least one of the cavities, while a vacuum is maintained in the vacuum chamber.

Global vacuum injection molded solder system and method

A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a light blocking layer. The light blocking layer can be a reflector/absorber layer containing titanium. The light blocking layer can be a layer resulting in attenuation of incident light below a certain level at the semiconductor substrate. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.

Reflective spatial light modulator array including a light blocking layer

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Poughquag, NY, United States of America

James L Speidell