Air Products and Chemicals, Inc.

Other

James Edward MacDougall

Scott Jeffrey Weigel

Charles G Coe

John F Kirner

Martin Devenney

Brian Keith Peterson

Konstantinos Chondroudis

Thomas Albert Braymer

C Eric Ramberg

Keith Cendak

Kevin Ray Heier

Timothy Weidman

Alexandros T Demos

Robert Parkash Mandal

Nikolaos Bekiaris

Michael P Nault

Keith Douglas Campbell

Yunfeng Lu

Thomas Alan Deis

Lisa Deis

Johan Adriaan Martens

Jean Louise Vincent

Pierre A Jacobs

Hareesh Thridandam

Keith Alan Ludwig

Lee Arthur Senecal

Paul Anthony Webley

Yan Liang Xiong

Ronald Joseph Kitzhoffer

Michael Francis Kimak

Lisa Deis, Legal Representative

Sarah Kathryn Coulter

Arne Baumgartl

Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.

Compositions for preparing low dielectric materials

This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably &#x3c;2.7 and lower. The process comprises the steps:

Aerosol misted deposition of low dielectric organosilicate films

A method and apparatus for determining pore size distribution and/or the presence of at least one killer pore in at least a portion of a porous film deposited upon a substrate are disclosed herein. In one embodiment, there is provided a method for determining pore size distribution comprising: providing the substrate having the film deposited thereupon wherein the film comprises pores and wherein the pores have a first volume; exposing the film to an adsorbate at a temperature and a pressure sufficient to provide condensation of the adsorbate in pores and wherein the pores after the exposing step have a second volume; and measuring the difference between the first and the second volume using a volumetric technique; and calculating the pore size and pore volume using the change in the first and the second volume, the pressure, and a model that relates pressure to pore diameter.

Method for characterizing porous low dielectric constant films

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (&#x3ba;) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E'), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E&#x2032;), derived in part from the dielectric constant of the material, of greater than about 26 GPa.

Low dielectric materials and methods for making same

A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

Mesoporous films having reduced dielectric constants

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition &lsqb;NR(CH ) &rsqb; A , where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

Ionic additives for extreme low dielectric constant chemical formulations

A method of separating a more strongly adsorbable component from one or more less strongly adsorbable components residing in a gaseous mixture comprising contacting the gaseous mixture at elevated pressure with a composition and adsorbing the more strongly adsorbed gas specie on the composition, wherein the composition is represented by the formula

Zincoaluminosilicates of the FAU structure

A composition of matter represented by the formula

An improved adsorbent for ozone comprises a crystalline aluminosilicate in which at least 90% of the exchangeable cation content is in the acid form and further which contains between 0.5 and 20 wt % of one or more adsorbed components which are non-reactive with ozone. Preferably the adsorbed component is water, and the total non-framework metal content expressed as metal oxide is less than 0.4 mole %.

Adsorbents for ozone recovery from gas mixtures

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New Tripoli, PA, United States of America

James Edward MacDougall