Lam Research Corporation

James E Tappan

Keith Laurence Comendant

Anthony J Ricci

Michael C Kellogg

Daniel Arthur Brown

John Patrick Holland

Zhigang Chen

Ian J Kenworthy

Jerrel Kent Antolik

Theo Panagopoulos

Randall S Mundt

Leonard John Sharpless

Allan Kent Ronne

Dean R Denison

Scott Stevenot

Arthur K Yasuda

John Stephen Drewery

Systems and techniques for providing for semiconductor processing chambers configured for use with two concentric edge rings with dual-lift mechanisms are disclosed. The dual-lift mechanisms may each have a first lifter structure and a second lifter structure which may be each at least partially independently actuatable. The first lifter structure may be used to move a lower edge ring of the edge rings between two or more vertically offset positions, and the second lifter structure may be used to raise and lower an upper edge ring of the edge rings. The dual-lift mechanism may be interfaced to the chamber housing of the semiconductor processing chamber.

Semiconductor processing chamber with dual-lift mechanism for edge ring elevation management

A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

Plasma processing devices having multi-port valve assemblies

A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.

Apparatus for spatial and temporal control of temperature on a substrate

A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

Chamber with vertical support stem for symmetric conductance and RF delivery

An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

An auto-aligning linear motion apparatus is provided. The apparatus includes a leadscrew. The apparatus also includes a nut arrangement configured to surround the leadscrew, wherein the nut arrangement includes at least a nut, a nut bracket, and a floating collar. A shoulder screw is inserted through a nut bracket slot of the nut bracket and a nut slot of the nut to rest at least partially within the floating collar. One dimension of the not bracket slot is larger than a dimension through a cross-section area of the shoulder screw to enable the shoulder screw to move within the nut bracket slot to adjust the nut arrangement as the leadscrew is rotated to maintain a concentric relationship between the nut arrangement and the leadscrew.

Floating collar clamping device for auto-aligning nut and screw in linear motion leadscrew and nut assembly and methods thereof

A plasma processing system with improved component temperature control is disclosed. The system may include a plasma processing chamber having a chamber wall. The system may also include an electrode disposed inside the plasma processing chamber. The system may also include a support member disposed inside the plasma processing chamber for supporting the electrode. The system may also include a support plate disposed outside the chamber wall. The system may also include a cantilever disposed through the chamber wall for coupling the support member with the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. The system may also include thermally resistive coupling mechanisms for mechanically coupling the lift plate with the support plate.

Plasma processing systems with mechanisms for controlling temperatures of components

A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Adjustable gap capacitively coupled RF plasma reactor including lateral bellows and non-contact particle seal

An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

Method for spatial and temporal control of temperature on a substrate

An auto-aligning linear motion apparatus is provided. The apparatus includes a leadscrew. The apparatus also includes a nut arrangement configured to surround the leadscrew, wherein the nut arrangement includes at least a nut, a nut bracket, and a floating collar. A shoulder screw is inserted through a nut bracket slot of the nut bracket and a nut slot of the nut to rest at least partially within the floating collar. One dimension of the nut bracket slot is larger than a dimension through a cross-section area of the shoulder screw to enable the shoulder screw to move within the nut bracket slot to adjust the nut arrangement as the leadscrew is rotated to maintain a concentric relationship between the nut arrangement and the leadscrew.

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Milpitas, CA, United States of America

James E Tappan