Cabot Microelectronics Corporation

Other

James A Dirksen

Brian L Mueller

Mingming Fang

Paul M Feeney

Gautam S Grover

David W Boldridge

Alicia F Francis

A method of polishing or planarizing a substrate comprising abrading at least a portion of the surface of a substrate comprising a metal, metal oxide, metal composite, or mixture thereof, with a composition comprising a metal oxide abrasive and a liquid carrier, wherein the composition has a pH of about 7 or less and the metal oxide abrasive has a total surface hydroxyl group density no greater than about 3 hydroxyl groups per nm.

Method of polishing or planarizing a substrate

A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises a liquid carrier, a chemical accelerator, and solids comprising about 5-90 wt. % of fumed metal oxide, and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

Composition and method for planarizing surfaces

Chemical mechanical polishing compositions including an abrasive and cesium hydroxide and methods for polishing dielectric layers associated with integrated circuits using cesium hydroxide containing polishing compositions.

Use of CsOH in a dielectric CMP slurry

A composition and a method for planarizing or polishing a surface with the composition are provided. The composition comprises about 5-90 wt. % of fumed metal oxide and about 10-95 wt. % of abrasive particles, wherein about 90% or more of the abrasive particles (by number) have a particle size no greater than 100 nm. The composition of the present invention is useful in planarizing or polishing a surface with high polishing efficiency, uniformity, and removal rate, with minimal defectivity, such as field loss of underlying structures and topography.

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Oswego, IL, United States of America

James A Dirksen