Applied Materials, Inc.

Jairaj Joseph Payyapilly

Jong Mun Kim

Kenny Linh Doan

Daisuke Shimizu

Srinivas D Nemani

Sean S Kang

Chunlei Zhang

Tao Zhang

Taiki Hatakeyama

Li Ling

Shinichi Koseki

Hikaru Watanabe

Yuju Huang

An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing

Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Methods and apparatus for in-situ protection liners for high aspect ratio reactive ion etching

An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising CFHin a chamber of an etch reactor, ionizing the CFHcontaining gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

[object Object]

Implementations described herein generally relate to semiconductor manufacturing and more particularly to the process of plasma etching an amorphous carbon layer. In one implementation, a method of etching a feature in an amorphous carbon layer is provided. The method comprises transferring a substrate including a patterned photoresist layer disposed above the amorphous carbon layer into an etching chamber, exposing the amorphous carbon layer to a fluorine-free etchant gas mixture including a fluorine-free halogen source gas and a passivation source gas and etching the amorphous carbon layer with a plasma of the fluorine-free etchant gas mixture. It has been found that plasma etching with a fluorine-free halogen based gas mixture reduces the formation of top critical dimension clogging oxides.

Plasma etch processes for opening mask layers

Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CFor CHF, and at least one of COS and CFI. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SFor NF, and/or an oxidizer, such as O, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.

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San Bruno, CA, United States of America

Jairaj Joseph Payyapilly