International Business Machines Corporation

Nanometrics Inc.

Accent Optical Technologies, Inc.

Jaime D Morillo

Christopher P Ausschnitt

Nigel Peter Smith

Lewis A Binns

Roger J Yerdon

Jed Hickory Rankin

A method for mask-to-wafer correlation among multiple masking levels of a semiconductor manufacturing process. The method includes creating compact targets containing structure patterns suitable for pattern placement, critical dimension and overlay measurement at a set of common locations on two or more patterning layers, and creating at least two masks containing functional circuit structure patterns and the compact targets at locations between functional circuit structure patterns. The method then includes measuring the targets, determining overlay variation between the masks, exposing and creating with one mask a first lithographic processing layer on a wafer, and exposing and creating with another mask a second lithographic processing layer on the wafer, over the first layer. The method further includes measuring the targets on the wafer at one or more of the layers, and correlating the mask and wafer measurements to distinguish mask and lithography induced components of critical dimension and overlay variation.

Target and method for mask-to-wafer CD, pattern placement and overlay measurement and control

A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.

Fabrication of lithographic image fields using a proximity stitch metrology

A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Multilayer alignment and overlay target and measurement method

Multi layer alignment and overlay target and measurement method

A method of determining alignment error in electronic substrates comprises providing on a layer of a substrate a first contrasting set of elements forming a first grid pattern having a plurality of grid segments in the x and y directions. The method also includes providing nested within at least one of the first grid pattern segments, on the same or different layer of a substrate, a second contrasting set of elements forming a second grid pattern having a plurality of grid segments in the x and y directions. The method then includes determining the center of the first set of elements in the first grid pattern and determining the center of the second set of elements in the second grid pattern. The method then comprises comparing the centers of the first and second sets of elements and determining alignment error of the first and second grid patterns.

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Beacon, NY, United States of America

Jaime D Morillo