Motorola Corporation

Jaime A Saravia

Rajeev Bajaj

Janos Farkas

David K Watts

Sung C Kim

Subramoney V Iyer

Sanjit K Das

Melissa Freeman

Mark G Fernandes

Jason Gomez

Chelsea Dang

Thom Kobayashi

Lance B Cook

A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (,) and a titanium layer (,) of a semiconductor device substrate (,) are polished using one polisher (,) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (,) from two different urce containers (,and,), wherein the first slurry is dispensed until e tungsten is removed and then the slurry dispense is switched to second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.

Processing for polishing dissimilar conductive layers in a semiconductor device

A method for polishing a metal layer (20) containing a combination of wide features (12), low density features (14), and high density features (18), is illustrated. A hydrophilic polish pad (24) having a shore D hardness of greater than 50 is used along with slurry (22) containing silica and an acidic based oxidizer such as oxadic acid in a chemical mechanical polishing (CMP) process. The result is less than 5:1 and preferably 1:1. This low selectivity results in the metal layer (20) being polished to a level below the surface of the surrounding oxide in a timed-controlled polish.

Low selectivity chemical mechanical polishing (CMP) process for use on

A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.

Chemical mechanical polishing (CMP) slurry for copper and method of use

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Round Rock, TX, United States of America

Jaime A Saravia