Aixtron Se

Jai Matharu

Kenneth B K Teo

Alexandre Jouvray

Simon Thomas

A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CVD reactor. The substrate comprising the seed structure () and the carbon structure () is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOX, AOXYor AX, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

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Hertfordshire, United Kingdom

Jai Matharu