Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Samsung Sdi Co., Inc.

Kyungpook National University Industry-academic Cooperation Foundation

University of Seoul Industry Cooperation Foundation

University of Seoul Foundation of Industry Academic Cooperation

Jai-kwang Shin

Jae-joon Oh

Jong-seob Kim

Ki-ha Hong

Hyuk-Soon Choi

In-jun Hwang

Woo-chul Jeon

Ho-jung Kim

Jong-bong Ha

Young-hwan Park

Ki-yeol Park

Hyun-sik Choi

Sun-kyu Hwang

U-in Chung

Sung-hoon Lee

Sun-ae Seo

Hyuk-soon Choi

Seong-gu Kim

Joon-yong Kim

Chang-yong Um

Young-Gu Jin

Sung-chul Lee

Sung-il Park

Jae-woong Hyun

Ji-hyun Hur

Hyung-su Jeong

Kyoung-yeon Kim

Young-dong Lee

Chang-jung Kim

In-kyeong Yoo

Kee-won Kim

David Seo

Kwang-seok Kim

Yoon-Ho Kang

Young-gu Jin

Hidekazu Hatanaka

Seung-hyun Son

Young-Kyou Park

Hyo-sug Lee

Young-mo Kim

Joong-ho Choi

Ji-Hyun Hur

Hyeon-ill Um

Woong-je Sung

Yoon-Dong Park

Chan-ho Pak

Ki-chul Kim

I-hun Song

Sun-il Kim

Hyuk Jae Chang

Suk-Pil Kim

Myoung-jae Lee

Hyun-jong Chung

Young-jin Cho

Sang-Hun Jeon

Ung-hwan Pi

Ji-young Bae

Ji-hoon Lee

Baik-woo Lee

Yuri Nikolaevich Tolmachev

Hyo-ji Choi

Dong-seok Kim

Yong-cheol Choi

Jung-hee Lee

Nam-young Lee

Ki-won Kim

Ung-hwan Pl

Andrei-B Petrin

Andrei B Petrin

Ki-sik Im

Jae-joo Oh

Min-kwon Cho

Kyoung-won Park

In-jun Whang

Jeong-seob Kim

A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

High electron mobility transistors and methods of fabricating the same

High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same

According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

High electron mobility transistor and method of manufacturing the same

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

High electron mobility transistor

A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.

Power management chips and power management devices including the same

According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Method and apparatus for controlling a gate voltage in high electron mobility transistor

Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices

High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.

High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same

A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

Nitride-based semiconductor device

An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

Electronic device including transistor and method of operating the same

The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

Methods of manufacturing high electron mobility transistors

Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

High electron mobility transistors and methods of manufacturing the same

A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Growing community of inventors

Anyang-si, South Korea

Jai-kwang Shin