Samsung Electronics Co., Ltd.

Jae-woo Nam

Eun-sung Kim

Chul-Ho Shin

Shi-Yong Yi

Hyun-woo Kim

Kyoung-seon Kim

Shi-yong Yi

Jeong-ju Park

Seung-chul Kwon

Chul-ho Shin

Shi-young Yi

A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Method of forming fine pattern and method of manufacturing integrated circuit device using the method

In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.

Methods of forming holes using mask pattern structures

A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Method of forming patterns

Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Methods of forming contact holes

A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions.

Methods of forming a pattern

A cleaning solution of a semiconductor device is composed of aqueous ammonia (NH.sub.4 OH), methanol (CH.sub.3 OH), hydrofluoric acid (HF) and deionized water (DI--H.sub.2 O), the volume ratio of NH.sub.4 OH to CH.sub.3 OH to DI--H.sub.2 O being 1:1-50:0.1-50, and the volume of HF being 1-10,000 ppm with respect to the mixture solution of NH.sub.4 OH, CH.sub.3 OH and DI--H.sub.2 O. The cleaning solution can be manufactured by simply mixing the respective compositions. The cleaning solution can strip polymers and particles within a short time, without etching or damaging the cleaned metal layers. Since the cleaning process of a semiconductor device is simplified, the processing cost is reduced and the yield and reliability are improved.

Cleaning solution for cleaning semiconductor device and cleaning method

Cleaning solutions for semiconductor devices comprise tetramethyl ammonium hydroxide, acetic acid, and water. Methods of removing contaminants from semiconductor devices comprise contacting the semiconductor devices with cleaning solutions to remove the contaminants from the semiconductor devices.

Growing community of inventors

Seoul, South Korea

Jae-woo Nam