Dongjin Semichem Co., Ltd.

Jae-Woo Lee

Jae-Hyun Kim

Jung-Youl Lee

Deog-Bae Kim

Jeong-sik Kim

Jun-Gyeong Lee

Eu-Jean Jang

Min-Ja Yoo

Young-Bae Lim

Sang-Jung Kim

Jeong-Sik Kim

Geun-Jong Yu

Eun-Kyung Son

Su-Young Han

Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim

Compound and composition for forming lower film of resist pattern, and method for forming lower film using same

A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (&#x2014;CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (&#x2014;NH&#x2014;), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.

Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same

Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (E) of the photoresist layer without an exposure mask, and then developing the same.

Method for forming fine pattern in semiconductor device

Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula.  In Formula, Ris hydrogen atom or methyl group (CH); Rand Reach is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Rand Rform one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.

Photosensitive molecular compound and photoresist composition including the same

A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 10 to 5000 weight parts of an organic solvent.  In the formula, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R' and R&#x2033; are independently hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms, and R&#x2032;&#x2033; is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms.

Photosensitive compound and photoresist composition including the same

A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula 1. Also, the photoresist composition comprises 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 200 to 5000 weight parts of an organic solvent. In the formula 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, and R and R' are independently a chain type or a ring type of aliphatic or aromatic hydrocarbon group of 1 to 30 carbon atoms. 

An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1.  in Formula 1, R is C&#x2dc;Cmono-cyclic or multi-cyclic saturated hydrocarbon, Ris C&#x2dc;Clinear hydrocarbon, C&#x2dc;Cperfluoro compound or C&#x2dc;Caromatic compound, Rand Rare independently hydrogen atom or C&#x2dc;Csaturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).

Acid-amplifier having acetal group and photoresist composition including the same

Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, 

Photo-sensitive compound and photoresist composition including the same

The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula.  In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C&#x2dc;Calkyl group with or without an ether group, or a substituted or unsubstituted C&#x2dc;Chydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.

Monomer, polymer and composition for photoresist

A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. 

Monomer having sulfonyl group, polymer thereof and photoresist composition including the same

A polymer including a monomer represented by the following Formula and a photoresist composition including the same are disclosed. The polymer and photoresist composition can improve the resolution and the process margin due to the low activation energy of the deprotection reaction of the alcohol ester group including saturated cyclic hydrocarbyl group, and also can produce fine photoresist patterns because they have a stable PEB(Post Exposure Baking) temperature sensitivity, and further, can improve the focus depth margin and the line edge roughness of the resist layer. In the above Formula, R* is a hydrogen or methyl group, Ris saturated hydrocarbyl group of 1 to 5 carbon atoms, R is mono-cyclic or multi-cyclic homo or hetero saturated hydrocarbyl group of 3 to 50 carbon atoms, and n is an integer of at least 2.

Photoresist monomer polymer thereof and photoresist composition including the same

A photoresist polymer having a spiro cyclic ketal group, and a photoresist composition including the same is disclosed. The photoresist polymer and the photoresist composition can improve the resolution and the process margin due to its low activation energy of the deprotection reaction of the spiro cyclic ketal group, and can produce fine photoresist patterns due to its low PEB (Post Exposure Baking) temperature sensitivity.

Growing community of inventors

Bucheon-si, South Korea

Jae-Woo Lee