Skhynix Inc.

Hynix Semiconductor Inc.

Jae-Hyoung Koo

Mi-Ri Lee

Kee-Jeung Lee

Jin-Woong Kim

Yun-Hyuck Ji

Beom-Yong Kim

Kwan-Woo Do

Seung-Mi Lee

Kyung-Woong Park

Woo-Young Park

Jin-Ho Bin

Ji-Hoon Ahn

Chi-Ho Kim

A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

Method for fabricating capacitor with high aspect ratio

A method for forming a device isolation layer of a semiconductor device or a non-volatile memory device is provided. A method for forming a device isolation layer of a semiconductor device includes: forming trenches having a first predetermined depth by etching a substrate; forming a first insulation layer having a second predetermined depth inside the trenches; forming a liner oxide layer having a predetermined thickness on internal walls of the trenches with the first insulation layer formed therein; and forming a second insulation layer for forming a device isolation layer over the substrate with the liner oxide layer formed therein, wherein the second insulation layer has a lower etch rate than that of the first insulation layer.

Method for forming device isolation layer of semiconductor device and non-volatile memory device

Growing community of inventors

Gyeonggi-do, South Korea

Jae-Hyoung Koo