Samsung Electronics Co., Ltd.

Jae-hee Hwang

Jeong-yun Lee

Il-Yong Jang

Tae-ryong Kim

Ka-soon Yim

Kwang-Jin Jung

Chung-howan Kim

A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer disposed on the opaque chromium layer. The hard mask layer is of a conductive material having an etch selectivity of at least 3:1 with respect to the opaque chromium layer against an etch gas mixture including chlorine gas and oxygen gas. Also, a resist layer is disposed on the hard mask layer. Alternatively, a phase shift layer can be interposed between the light-transmissive substrate and the opaque chromium layer. Preferably, the hard mask layer is formed of Mo or MoSi. First, the resist layer is patterned, and the hard mask is etched using the patterned resist as an etch mask. Then the chromium layer is etched using the patterned hard mask as an etch mask.

Photomask blank and method of fabricating a photomask from the same

A method of manufacturing semiconductor device that improves the alignment margin between a contact hole and a device pattern includes a layer having an upper vertically shaped portion and a lower symmetrically inclined shaped portion. That is, the lower portion is tapered.

Method of manufacturing semiconductor devices and semiconductor device capacitor manufactured thereby

Growing community of inventors

Seongnam-si, South Korea

Jae-hee Hwang