Rohm and Haas Electronic Materials Korea Ltd.

Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Jae-Bong Lim

Jin Hong Park

Jae Hwan Sim

Jung Kyu Jo

Hye-Won Lee

Jung-June Lee

Eui-Hyun Ryu

Cheng-Bai Xu

Jihoon Kang

You Rim Shin

Jun-Han Yun

Phillip Dene Hustad

Mingqi Li

Emad Aqad

Jong Keun Park

Sook Jin Lee

Eui Hyun Ryu

Myung-Yeol Kim

So-Yeon Kim

Jae-Yun Ahn

Jae-Hwan Sim

EunHye Cho

Bon-ki Ku

Eunhye Cho

Ji-Hoon Kang

Seung Uk Lee

Ji-Hon Kang

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Coating compositions for use with an overcoated photoresist

An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.

Organic bottom antireflective coating composition for nanolithography

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a thermal acid generator that comprises: i) a pyridinium component having one or more ring substituents selected from optionally substituted alkyl and optionally substituted heteroalkyl; and ii) a sulfonic acid component.

An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.

Method for forming pattern using antireflective coating composition including photoacid generator

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

The present invention relates to a method for forming a pattern by negative tone development (NTD) which is prepared by forming an anti-reflective coating composition layer comprising a photoacid generator between the substrate and the photoresist composition layer, and thus exhibits improved line width (CD) in the pattern and prevents pattern collapse owing to thorough activation of de-blocking of the photoresist composition layer during the exposure process.

Method for forming pattern using anti-reflective coating composition comprising photoacid generator

In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Aris an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Ris chosen from optionally substituted Cto Clinear, branched or cyclic alkyl, and optionally substituted Cto Caryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Gap-fill methods

Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different, a crosslinker, an acid catalyst and a solvent, wherein the gap-fill composition is disposed in the gaps; (c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with the second polymer to form a crosslinked polymer; (d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps; (e) patternwise exposing the photoresist layer to activating radiation; and (f) developing the photoresist layer to form a photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps with an antireflective coating material.

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Chungcheongnam-do, South Korea

Jae-Bong Lim