Olin Corporation

Advanced Technology Interconnect Incorporated

Jacob Crane

Deepak Mahulikar

Eugene Shapiro

Julius C Fister

John F Breedis

Yousef Saleh

Michael J Pryor

Sheldon H Butt

Frank N Mandigo

Ronald N Caron

George J Muench

David D McDevitt

Joseph Saleh

Sam Friedman

Lifun Lin

Brian Mravic

Jeffrey S Braden

Stanley Shapiro

Abid A Khan

John G Cowie

Harvey P Cheskis

Sankaranarayanan Ashok

Edward F Smith

Anthony M Pasqualoni

Ashok Sankaranarayanan

Brian E O'Donnelly

Barry C Johnson

Composite materials for electronic packages are disclosed. The composite materials comprise a core layer and first and second cladding layers. The core and cladding layer compositions and thicknesses are selected to maximize thermal and electrical conductivity and to minimize the coefficient of thermal expansion of the composite. The composite material may be employed to fashion the package base, the leadframe, a heat spreader or combinations thereof. In one embodiment, a portion of the first cladding layer is removed so that an electronic device may be mounted directly to a high thermal conductivity core.

Thermal performance package for integrated circuit chip

There is provided a leadframe assembly for supporting a hybrid circuit. The hybrid circuit is supported by either the base of an electronic package or by a die attach paddle and electrically interconnected to a leadframe by wire bonds. A plurality of semiconductor devices are mounted on the assembly and supported by either metallization pads formed on the hybrid circuit, a dielectric layer of the hybrid circuit, a die attach paddle, a metallic package component or combinations thereof.

Adhesively sealed metal electronic package incorporating a multi-chip

Machinable alpha beta brass having a reduced lead concentration is claimed. The alloy contains bismuth to improve machinability. Either a portion of the zinc is replaced with aluminum, silicon or tin, or a portion of the copper is replaced with iron, nickel or manganese.

Machinable copper alloys having reduced lead content

There is provided an electronic package assembly having a leadframe and buffer bonded to a metallic base. To reduce the stress generated by the coefficient of thermal expansion mismatch, the buffer is mounted on a pedestal. The cross sectional area of the pedestal is less than that of the buffer, such that the at least a portion of the buffer overhangs the pedestal.

Electronic package with stress relief channel

A palladium alloy of the form Pd.sub.x M.sub.y M'.sub.z where M is at least one element selected from the group consisting of silicon, iron, nickel, copper, chromium, cobalt, boron and aluminum and M' is at least one element selected from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten is provided. The alloys exhibit oxidation resistance and low electrical contact resistance and are particularly suited for electrical applications such as coatings for electrical contacts or connectors. In a preferred embodiment, the alloy is palladium/niobium containing from about 5 to about 10 atomic percent niobium.

Palladium alloys having utility in electrical applications

A palladium alloy of the form PdNbM where M is at least one element selected from the group consisting of silicon, iron, nickel, copper, cobalt, boron and aluminum is provided. The alloys exhibit oxidation resistance and electrical contact resistance and are particularly suited for electrical applications such as coatings for electrical contacts or connectors. In a preferred embodiment, the alloy contains from about 5 to about 10 atomic percent niobium.

Machinable copper alloys having a reduced lead concentration are disclosed. An additive to the alloy accumulates both at the grain boundaries and intragranularly. The additive facilitates chip fracture or lubricates the tool. One additive is a mixture of bismuth and lead with the lead concentration below about 2% by weight.

The present invention relates to copper-iron-nickel alloys having utility in electronic applications because of their low coefficients of expansion and high thermal conductivities. Alloys in accordance with the present invention consist essentially of from 10% to about 80% copper and the balance iron plus nickel with the ratio of iron to nickel being in the range of from about 1.5:1 to about 2.0:1. Preferred alloys have an iron to nickel ratio in the range of from about 1.6:1 to about 1.9:1. The process includes casting the alloy and treating the iron-nickel phase of alloy to minimize its surface volume. The treating step may comprise speroidizing the iron-nickel phase or applying an electromagnetic stirring force to the alloy during the casting step.

Process for improving the electrical conductivity of a

A kit for the assembly of an adhesively sealed package designed to encase an electronic device is provided. The kit comprises a metallic base and cover components which are adapted to receive a polymeric adhesive. At least those portions of the base and cover component which will contact the polymeric adhesive are provided with a coating of a second metal or oxide. In one embodiment, first, second and third dry film adhesives are tacked to the base and cover components.

Kit for the assembly of a metal electronic package

A metal package for housing an electronic device wherein the electronic device is attached to a severable die attach pad. The die attach pad is bonded to the base of the package with a thermally conductive medium. The base is bonded to the die attach pad and to the leadframe at the same time to reduce the thermal degradation of the sealants. In other embodiments, apertures are provided in the base component to enhance cooling of the electronic device and in the cover component to vent reaction by-products.

Metal electronic package

A semiconductor package for an electrical component which has a metal or metal alloy leadframe with first and second surface, which leadframe is adapted to have an electrical component connected thereto. The leadframe is bonded by means of a polymer to a copper or copper alloy base member. The leadframe is also bonded by means of a polymer to a copper or copper alloy cap member. The cap and base members have coated to their inside surfaces a metal or metal alloy. The coating improves the polymer bond between the leadframe and the base and cap members. The surface area of the base member is increased to transfer more heat from the silicon chip in the semiconductor package and to reduce the thermal stresses between the silicon chip and the base member.

Semiconductor package

The present invention relates to copper-iron-nickel composite materials having utility in electronic applications because of their low coefficients of expansion and high thermal conductivities. Composite materials in accordance with the present invention consist essentially of about 10% to 80% copper and the balance iron plus nickel with the ratio of iron to nickel being in the range of from about 1.5:1 to about 2.0:1. Preferred composite materials have an iron to nickel ratio in the range of from about 1.6:1 to about 1.9:1.

Copper-iron-nickel composite material for electrical and electronic

The present invention relates to a process for forming improved bonds between components of electrical or electronic devices. The process of the present invention preferably comprises annealing a metallic substrate to form a substantially uniform, substantially continuous oxide layer on a surface of the substrate, exposing the oxidized substrate to a reducing atmosphere so as to form an irregular surface on the substrate, and bonding another component to the irregular surface.

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Woodbridge, CT, United States of America

Jacob Crane