Intel Corporation

Jack Yaung

Rishabh Mehandru

Stephen M Cea

Aaron D Lilak

Cory E Weber

Patrick H Keys

Leonard C Pipes

Seahee Hwangbo

Tzu-Min Ou

Fin doping, and integrated circuit structures resulting therefrom, are described. In an example, an integrated circuit structure includes a semiconductor fin. A lower portion of the semiconductor fin includes a region having both N-type dopants and P-type dopants with a net excess of the P-type dopants of at least 2E18 atoms/cm. A gate stack is over and conformal with an upper portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

Fin doping and integrated circuit structures resulting therefrom

Growing community of inventors

Portland, OR, United States of America

Jack Yaung