Danfoss Silicon Power Gmbh

Heraeus Deutschland Gmbh & Co Kg

Jacek Rudzki

Frank Osterwald

Martin Becker

Ronald Eisele

Holger Ulrich

Lars Paulsen

Michael Schäfer

Andreas Hinrich

Susanne Klaudia Duch

Anton Miric

Christian Bachmann

David Benning

Frank Schefuss

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Semiconductor module with a first substrate, a second substrate and a spacer separating the substrates from each other

Sintering tool () with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (), arranged at two locations opposite the cradle, for fixing a protective film () covering the electronic subassembly (BG).

Sintering tool and method for sintering an electronic subassembly

Tool () for the lower die of a sintering device, the tool () having a rest () for an electronic subassembly () comprising a circuit carrier, to be sintered, where the rest () is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly ().

Sintering tool for the lower die of a sintering device

One aspect relates to a method for manufacturing a substrate assembly for attachment to an electronic component A substrate is provided with a first side and a second side. A contact material layer is applied to the first side of the substrate. A pre-fixing agent is applied at least to sections of a side of the contact material layer facing away from the substrate.

Method for producing a substrate arrangement, substrate arrangement, and method for connecting a substrate arrangement to an electronic component

A method for manufacturing semiconductor chips () having arranged thereon metallic shaped bodies (), having the following steps: arranging a plurality of metallic shaped bodies () on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (), exhibiting a first connection material () and a second connection material (), and processing the first connection material () for connecting the metallic shaped bodies () to the semiconductor wafer without processing the second connecting material (), wherein the semiconductor chips () are separated either prior to arranging the metallic shaped bodies () on the semiconductor wafer or after processing the first connection material ().

Method for manufacturing semiconductor chips

Sintering device for sintering at least one electronic assembly, having a lower die and an upper die which is slidable towards the lower die, or a lower die which is slidable towards the upper die. The lower die forms a support for the assembly to be sintered and the upper die includes a receptacle for a pressure pad for exerting pressure directed towards the lower die, and a delimitation wall which laterally surrounds the pressure pad. The delimitation wall having an outer delimitation wall and an inner delimitation wall surrounded by the outer delimitation wall, the inner delimitation wall mounted so as to be slidable towards the outer delimitation wall and so as to be slid in the direction of the lower die such that, following the placing of the inner delimitation wall on the lower die, the pressure pad is displaceable in the direction of the lower die.

Sintering device

A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and/or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and/or second component and/or other components of the power semiconductor module, and complete-area sintering of the sinter material.

Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module

An electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.

Electronic sandwich structure with two parts joined together by means of a sintering layer

A power semiconductor contact structure for power semiconductor modules, which has at least one substrateand a metal molded bodyas an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layerwith regions of varying thickness. The metal molded bodytakes the form here of a flexible contacting filmof such a thickness that this contacting film is sintered with its sidefacing the sintering layeronto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded bodyor the substrate, followed by sintering together the contacting filmwith the substrateby using the properties of the layer of sintering material that are conducive to connection, the contacting filmbeing made to develop its distinct form to correspond to the varying thickness of the layer of sintering material

Power semiconductor contact structure and method for the production thereof

The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal molded body corresponding to the shape of the upper-sided potential surfaces, applying a connecting layer to the upper-sided potential surfaces or to the metal molded bodies, and applying the metal molded bodies and adding a material fit, electrically conductive compound to the potential surfaces prior to the joining of the thick wire bonds to the non-added upper side of the molded body.

Method for creating a connection between metallic moulded bodies and a power semiconductor which is used to bond to thick wires or strips

The invention relates to a power semiconductor chip () having at least one upper-sided potential surface and contacting thick wires () or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body () on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires () or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

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Kiel, Germany

Jacek Rudzki