Rca Inc.

Jacek Lagowski

Lubomir L Jastrzebski

Crystalline quality of a semiconductor material near its interface with an insulator is evaluated by the photovoltage response to a light beam scanned in wavelength. The crystalline quality is determined from the photovoltage interference pattern in the region of intrinsic excitation of the material. A body of silicon-on-sapphire (SOS) is used to illustrate the method.

Method to determine the crystalline properties of an interface of two

Crystalline quality of a semiconductor material at its interface with an insulator is optically evaluated by a reflected light beam scanned in wavelength. The refractive index of the material at or near the interface is determined by calculation from the measured values of reflectivity extrema and compared, if desired, to the bulk refractive index of the material. This index is an indicia of the crystalline quality at the interface.

The content of oxygen, if any, that is present in a body of essentially monocrystalline semiconductor material is determined by converting by heating all of the oxygen in the body to interstitial form. The oxygen content is measured by infrared beam evaluation of the absorption band to identify the interstitial oxygen present in the material.

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Wobum, MA, United States of America

Jacek Lagowski