1. Samsung Electronics Co., Ltd. (20 from 131,611 patents)

2. Infineon Technologies Ag (1 from 14,724 patents)

3. Chartered Semiconductor Manufacturing Ltd (corporation) (1 from 962 patents)

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7. 7800134 - CMOS integrated circuit devices having stressed NMOS and PMOS channel regions therein

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11. 7465617 - Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

12. 7365025 - Methods of forming dual-damascene interconnect structures on semiconductor substrates using multiple planarization layers having different porosity characteristics

13. 7297584 - Methods of fabricating semiconductor devices having a dual stress liner

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