Cabot Microelectronics Corporation

J Scott Steckenrider

Heinz Hermann Busta

Brian L Mueller

Yuchun Wang

David Schroeder

Ian Wylie

Gary W Snider

A chemical-mechanical polishing pad, and method of polishing a substrate using a polishing pad, comprising (a) a resilient subpad, and (b) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises (i) a polishing surface that is substantially free of bound abrasive particles, and (ii) a back surface releasably associated with the resilient subpad.

Continuous contour polishing of a multi-material surface

A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more electrically connected integrated circuits, separated by a cooling channel.

Three dimensional integrated circuits

A current-controlling device comprising a first conductor, a second conductor, and a tunneling barrier comprising a first insulating layer between the first conductor and the second conductor. The tunneling barrier electrically isolates the first conductor from the second conductor. At least one mobile charge is positionable within the tunneling barrier. The device also includes a gate, wherein a voltage applied to the gate with respect to the substrate (or with respect to a second gate formed on or in the substrate) modulates or moves the mobile charge to a position between the first conductor and the second conductor within the tunneling barrier, thus deforming the shape of the energy barrier between the first conductor and the second conductor. The deformation can cause a current to flow between the conductors when a voltage is present between them due to quantum mechanical tunneling.

Method of forming a current controlling device

An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

Growing community of inventors

Plainfield, IL, United States of America

J Scott Steckenrider