Asm IP Holding B.v.

Ivan Zyulkov

David Kurt De Roest

Michael Eugene Givens

Daniele Piumi

Yoann Francis Tomczak

Ivo Johannes Raaijmakers

Ryu Nakano

Zecheng Liu

Takashi Yoshida

Tatiana Ivanova

Perttu Sippola

Yiting Sun

BokHeon Kim

Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal-containing layer comprises oxygen and a metal.

Method of forming a structure and system for same

A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

Substrate processing apparatus and method

Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Method of forming a photoresist underlayer and structure including same

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Brussels, Belgium

Ivan Zyulkov