Kla Tencor Corporation

Tokyo Electron Limited

Kla Corporation

Google Inc.

Tokyo Electron Limi Ted

Ivan Maleev

Guoheng Zhao

Stephen Biellak

Daniel Ivanov Kavaldjiev

Anatoly Romanovsky

Donald Pettibone

Mehdi Vaez-Iravani

Yury Yuditsky

Dirk Woll

Yung-Ho Alex Chuang

Shin-Yee Lu

John Fielden

Nelson George Publicover

Christian Wolters

Yan Chen

Hanyou Chu

David W Shortt

Lewis James Marggraff

Xinkang Tian

Ching-Ling Meng

Bret Whiteside

Mihail Mihaylov

Peter Milford

Ching Ling Meng

Xiaoxu Lu

Spencer James Connaughton

Jijen Vazhaeparambil

Nathan Lord

Venkata Kode

Qionglin Gao

Steven Biellak

Peter N Milford

An optical apparatus is provided. The optical apparatus includes a plurality of optical fibers each configured to transmit a respective light beam. The plurality of optical fibers includes at least one first optical fiber and at least one second optical fiber. The optical apparatus also includes a first shutter module coupled to the first optical fiber and configured to adjust a first light beam in the first optical fiber in at least one aspect selected from the group consisting of light intensity, light polarization and spectral distribution when the first shutter module is closed. The second optical fiber is independent of the first shutter module. The plurality of optical fibers is bundled at one end to output a combined light beam so that a profile of the combined light beam is controlled by opening or closing the first shutter module.

Fiber bundle based optical spot size selector

A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Method and apparatus for inspecting pattern collapse defects

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Raman sensor for supercritical fluids metrology

An optical system for controlling polarization may include an illumination source to illuminate a surface of a sample, a set of collection optics to collect illumination from the surface of a sample, and a wave plate having a spatially-varying surface profile along a thickness direction positioned at a pupil plane of the set of collection optics, where the spatially-varying surface profile of the wave plate is configured to control polarization rotation as a continuous function of transverse position, and where the spatially-varying surface profile is selected to rotate light scattered from a surface of a sample to a selected polarization angle. The system may further include a linear polarizer oriented to block light with the selected polarization angle, and a sensor to detect illumination transmitted through the linear polarizer.

System, method and apparatus for polarization control

Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.

Apparatus and method for monitoring and measuring properties of polymers in solutions

A polarization control device includes a first wave plate having a first surface profile and a second wave plate having a second surface profile complementary to the first surface profile. The optical axis of the first wave plate is orthogonal to the optical axis of the second wave plate. The first wave plate and the second wave plate are positioned to align the first surface profile with the second surface profile and maintain a constant thickness across the polarization control device. The first wave plate and the second wave plate may control polarization rotation as a continuous function of transverse position across a pupil plane of an optical system. The first wave plate and the second wave plate are separated by a sufficiently small distance so as to limit wave front distortion below a selected level.

An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Optical sensor for phase determination

Systems and methods are provided for discerning the intent of a device wearer primarily based on movements of the eyes. The system may be included within unobtrusive headwear that performs eye tracking and controls screen display. The system may also utilize remote eye tracking camera(s), remote displays and/or other ancillary inputs. Screen layout is optimized to facilitate the formation and reliable detection of rapid eye signals. The detection of eye signals is based on tracking physiological movements of the eye that are under voluntary control by the device wearer. The detection of eye signals results in actions that are compatible with wearable computing and a wide range of display devices.

Systems and methods for biomechanically-based eye signals for interacting with real and virtual objects

Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

Wafer inspection

A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.

TDI sensor in a darkfield system

Methods and systems for minimizing interference among multiple illumination beams generated from a non-uniform illumination source to provide an effectively uniform illumination profile over the field of view of an inspection system are presented. In some examples, a pulsed beam of light is split into multiple illumination beams such that each of the beams are temporally separated at the surface of the specimen under inspection. In some examples, multiple illumination beams generated from a non-uniform illumination source are projected onto spatially separated areas on the surface of the specimen. A point object of interest illuminated by each area is imaged onto the surface of a time-delay integration (TDI) detector. The images are integrated such that the relative position of the illumination areas along the direction of motion of the point object of interest has no impact on the illumination efficiency distribution over the field of view.

Multi-spot illumination for improved detection sensitivity

Methods and systems for determining wafer inspection coordinates for fixed location(s) on a wafer are provided. One system includes an illumination subsystem configured to direct light to a spot on an edge of a wafer. The spot extends beyond the edge of the wafer. The system also includes a stage that rotates the wafer thereby causing the spot to be scanned over the edge of the wafer. The system also includes a detector configured to detect light from the spot while the spot is being scanned over the edge and to generate output responsive thereto. The system further includes a computer processor configured to determine wafer inspection coordinates of two or more locations on the edge of the wafer based on the output and to determine wafer inspection coordinates of fixed location(s) on the wafer based on the wafer inspection coordinates of the two or more locations on the edge.

Wafer edge detection and inspection

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Pleasanton, CA, United States of America

Ivan Maleev