Other

Epion Corporation

Tokyo Electron Limited

Hyogo Prefecture

Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Olympus Corporation

Agency of Industrial Science and Technology

Japan Science and Technology Corporation

Research Development Corporation of Japan

Mitsui Engineering and Shipbuilding Company Limited

Isao Yamada

Jiro Matsuo

Noriaki Toyoda

Mitsuaki Harada

Makoto Akizuki

Atsumasa Doi

Masayoshi Koike

Isamu Akasaki

Hiroshi Amano

Kenichi Goto

Seiji Nagai

Matthew C Gwinn

Allen R Kirkpatrick

Shiro Yamasaki

Masaki Narushima

Takashi Hayakawa

Koichi Mori

James A Greer

Masataka Kase

Kazutoshi Murata

Masato Kiuchi

Kenichi Hara

Naomasa Miyatake

Tomonori Imamura

Yoshimi Kano

Richard P Torti

Yoichi Hashimoto

Daisuke Takeuchi

Shigeharu Tamura

Bruce K Libby

Satoru Ogasawara

Norimasa Umesaki

Kensuke Murai

James G Bachand

Lester G Crawford

Teruyuki Kitagawa

Norihiro Shimada

Kazutoshi c/o Mitsui Engineering & Shipbuilding Co Ltd Murata

Naomasa c/o Mitsui Engineering & Shipbuilding Co Ltd Miyatake

An etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.

Etching method, etching apparatus, and storage medium

A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.

Charged particle separation apparatus and charged particle bombardment apparatus

An ultra precise polishing method includes controlling an irradiation time of a surface position of an object to be processed irradiated by a gas cluster ion beam. A profile is created and polished on the surface of the object to be processed by controlling irradiation of the gas cluster ion beam. An ultra precise polishing apparatus includes an irradiating device for irradiating a surface of an object to be processed by a gas cluster ion beam. A positioning device is provided for changing a surface position of the object to be processed, which is irradiated by the gas cluster ion beam by moving the irradiating device and the object to be processed relative to each other. A control device is provided for controlling the irradiation time of a surface position of the object to be processed irradiated by the gas cluster ion beam.

Ultra precise polishing method and ultra precise polishing apparatus

The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*10atoms/cmor less to produce the SiC monitor wafer.

Production method of SiC monitor wafer

Method for forming gas cluster and method for forming thin film

Method for forming thin film with a gas cluster ion beam

The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.

Transparent conductive film and process for producing the film

An apparatus for smoothing a surface of a substrate includes an ionizer to form gas cluster particles; a power supply to accelerate the gas cluster particles; a triode/Einzel lens combination assembly to focus the accelerated gas cluster particles; a permanent magnet beam filter; scan plates to irradiate the filtered accelerated gas cluster particles onto a surface of a workpiece situated in a reduced pressure atmosphere chamber; and a substrate loading/unloading mechanism to load and unload the workpiece. The ionizer includes an alignment device wherein the alignment device includes a X/Y translation element and an angular translation element. The substrate loading/unloading mechanism provides a workpiece from a plurality of workpieces onto a holder positioned at a first position within the reduced pressure atmosphere chamber, the first position being substantially parallel to a central axis of a flow of the filtered accelerated gas cluster particles. The substrate loading/unloading mechanism also moves the holder with a workpiece thereon to a second position, the second position being substantially perpendicular to the first position and the central axis of a flow of the filtered accelerated gas cluster particles.

Gas cluster ion beam smoother apparatus

A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer , an n layer , a cladding layer , an active layer , a p-type cladding layer , a contact layer , an SiO layer , an electrode which is formed on the window formed in a portion of the SiO layer , and an electrode which is formed on a portion of the n layer by etching a portion of layers from the contact layer down to the cladding layer . One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.

Method for manufacturing group III nitride compound semiconductor laser diodes

A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.

Method for forming carbonaceous hard film

A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.

Boron doping by decaborane

A portable enclosure system and method for providing a suitable breathing atmosphere therein includes a chamber. The chamber may assume a variety of shapes. An electric fan and filter assembly is provided and is attached to the chamber by way of a flexible air hose. The fan draws air into the fan and filter assembly and exhausts it into the air hose through a filter. The filtered air travels into the chamber thus providing a positive pressure within the chamber. The positive pressure within the chamber forces unwanted particulates out of the chamber by way of exhaust ports and prevents unwanted particulates from entering the chamber. In providing an enclosure filled with a suitable breathing environment, the chamber is placed on a substantially flat surface. The fan is turned on and the chamber is allowed to be purged of unwanted allergens. The fan remains on to maintain a positive pressure within the chamber and provide a steady supply of fresh filtered air.

Portable inflatable enclosure system with filtered positive pressure gas

A method of treating the surface of a substrate using an extra-low-speed ion beam. The method involves forming a cluster, which is a lump-shaped group of atoms or molecules of a gaseous substance at the ambient temperature, by adiabatic expansion form a high pressure region into a high-vacuum region thorough a small-bore conical nozzle, pouring electrons onto the cluster, accelerating the thus generated cluster ions by acceleration voltage, and irradiating the ions onto the surface of a solid. The method permits surface cleaning of a substrate without causing damage or defects, ion injection into the very shallow surface layer portion, and CVD.

Method for surface treatment with extra-low-speed ion beam

Disclosed herein is a method of producing a mirror for electromagnetic radiations of short wavelengths, the method including forming a film on a substrate having a surface roughness smaller than 5 .ANG. by bombardment with a metal, which is at least partly in the form of cluster ions, in a vacuum chamber under the conditions that the accelerating voltage applied to the accelerating electrode is of 3-7 kV, the temperature of the substrate is kept at 0.degree.-60.degree. C., the pressure in the vacuum chamber is kept below 1.times.10.sup.-7 Torr, and the film is formed at a rate of 0.5-5 .ANG./s until it becomes 50-1000 .ANG. thick. A mirror form in accordance with this method has a high reflectivity which has never been achieved by conventional methods.

Method of forming mirror for electromagnetic radiations of short

Optical reflectors and methods of constructing optical reflectors having high damage thresholds, durability and general applicability are disclosed in which a highly planar substrate, such as a single crystal silicon or other single crystalline material, is disposed within a deposition chamber and oriented to present a particular crystallographic plane. An epitaxial layer of reflective metal, such as aluminum, is grown upon the substrate by ion beam or other method of deposition and then covered with a transparent protective coating.

High energy ultraviolet laser reflector grown on a single crystalline

Growing community of inventors

Hyogo, Japan

Isao Yamada