Tokyo Electron Limited

Central Glass Company, Limited

Isao Gunji

Hitoshi Itoh

Hidenori Miyoshi

Hiroyuki Miyashita

Taro Ikeda

Yumiko Kawano

Hirokazu Ueda

Eiki Kamata

Kunihiro Tada

Isamu Mori

Tomonori Umezaki

Mitsutoshi Ashida

Yuta Takeda

Yusaku Izawa

A plasma processing apparatus includes: a processing container; a ceiling wall forming a part of the processing container and including an opening; and a transmission window configured to close the opening, wherein the opening under the transmission window is formed as a recess portion, wherein the recess portion is a supply port for supplying electromagnetic waves from the transmission window into the processing container, wherein first gas supply holes are formed on a lower surface of the ceiling wall, and wherein second gas supply holes are formed on an inner surface of the recess portion.

Plasma processing apparatus

A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

Plasma processing method and plasma processing apparatus

A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with &#x3b2;-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and &#x3b2;-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to &#x3b2;-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

Dry cleaning method of substrate processing apparatus

Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

Film forming method and film forming apparatus

Disclosed is a substrate processing apparatus in which a plurality of rod-like ceramic heaters are arranged in the form of islands and affixed to the top plate of a process chamber so as to face a wafer, and the lower end portion of each ceramic heater is provided with a metal catalyst layer in such a manner that the metal catalyst layer faces a gas discharge hole of a gas diffusion plate. Consequently, the metal catalyst layer is indirectly heated by the ceramic heater (a resistance heating wire), thereby activating a processing gas.

Substrate processing apparatus

Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

Substrate processing method and substrate processing apparatus

A film formation method is arranged to react carboxylic acid with an oxygen-containing metal compound to produce carboxylate salt gas of a metal of the metal compound. The method then supplies the carboxylate salt gas of the metal onto a substrate. The method applies energy to the substrate to decompose the carboxylate salt of the metal supplied onto the substrate, thereby forming a metal film.

Film formation method and apparatus

A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

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Nirasaki, Japan

Isao Gunji