Canon Kabushiki Kaisha

Fuji Photo Film Company, Limited

Kanegafuchi Chemical Industry Co., Ltd.

Mita Industrial Co., Ltd.

Isamu Shimizu

Shunichi Ishihara

Masaaki Hirooka

Masahiro Kanai

Junichi Hanna

Shunri Oda

Eiichi Inoue

Jun-Ichi Hanna

Shigeru Ohno

Keishi Saitoh

Kyosuke Ogawa

Shigeru Shirai

Toshiyuki Komatsu

Keishi Saito

Masao Ueki

Ryoji Fujiwara

Minori Yamaguchi

Eiji Takeuchi

Akira Sakai

Kozo Arao

Hirokazu Ohtoshi

Junichiro Kanbe

Katsumi Nakagawa

Tsutomu Murakami

Yoshiyuki Osada

Masahiro Fushimi

Hiroyuki Tokunaga

Makoto Shizukuishi

Takayoshi Arai

Mitsuyuki Niwa

Hirokazu Ootoshi

Keisha Saitoh

A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Process for forming deposition film

A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.

Method of forming crystalline compound semiconductor film

A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).

Silicon-containing deposited film

There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

Device for forming deposited film

An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

Apparatus for forming deposited film

There is described a device for forming a deposited film on a substrate in a vacuum chamber through utilization of reaction between a gasifiable starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidization action for the gasifiable starting material which has a gas introducing means comprising a pipe for introducing said gasifiable starting material and a pipe for introducing said gaseous halogenic oxidizing agent where the pipes are arranged in a multi-concentric structure and at least one of the pipes except the outermost pipe is constituted of a porous pipe or has a hole opened through the wall thereof and the outermost pipe has at least one opening oriented toward the substrate.

Device for forming a deposited film

There is provided an improved process of forming a functional epitaxial film by using two kinds of active species and chemically reacting them. One of the species is an activated substance which contains silicon atoms or germanium atoms and halogen atoms. The other species is one which is generated from a chemical substance capable of contributing to formation of a film and chemically reactive with the former active species.

Process for the production of functional crystalline film

A process for forming a silicon-containing polycrystalline film on a substrate by a chemical vapor deposition method, said process comprises the steps of:

Process for depositing a silicon-containing polycrystalline film on a

A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

Process for forming deposited film

A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.

Process for forming deposited film from a group II through group VI

There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.

A photosensor has a photoconductive member. The photoconductive member has a structure comprising a laminated product consisting of functional thin films superposed on one another. The laminated product comprises at least two functional thin films. The functional thin film containing 10 atomic % or less of hydrogen. The band gaps and conduction types and/or conductivity of the functional thin films are controlled to provide high photo sensitivity.

Non-single crystalline photosensor with hydrogen and halogen

Improved pin type and Schottky time thin film photoelectromotive force elements which exhibit desired effects in short-circuit current (Isc), open-circuit voltage (Voc), fill factor (F.F.), photoelectric conversion efficiency and S/N ratio, characterized in that at least one of the n-type semiconductor layer and the p-type semiconductor layer is constituted with a non-single-crystal silicon semiconductor layer comprised of a plurality of stacked non-single-crystal silicon films of 100 .ANG. or less thickness containing 1 to 10 atomic % of hydrogen atoms.

Growing community of inventors

Yokohama, Japan

Isamu Shimizu