Tokyo Electron Limited

Isamu Sakuragi

Kazuhiro Kubota

Tsutomu Hiroki

Nobuyoshi Kobayashi

Takehiro Shindo

Kazuhiro Tomioka

Akinori Kitamura

A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Bevel/backside polymer removing method and device, substrate processing apparatus and storage medium

A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.

Substrate processing method, substrate processing system, and computer-readable storage medium

A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a Hgas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.

Growing community of inventors

Nirasaki, Japan

Isamu Sakuragi