Central Glass Company, Limited

Combi Corporation

Tokyo Electron Limited

Neriki Valve Co., Ltd.

Isamu Mori

Akiou Kikuchi

Tomonori Umezaki

Satoru Okamoto

Yasuo Hibino

Akifumi Yao

Mitsuya Ohashi

Naoto Takada

Hitoshi Itoh

Hiroyuki Oomori

Masaru Takeda

Isao Gunji

Tetsuya Tamura

Tatsuo Miyazaki

Masaaki Yonekura

Tadayuki Kawashima

Kenji Tanaka

Yuta Takeda

Masanori Watari

Yusaku Izawa

Hiroshi Horiuchi

Koichi Kaminaga

Koji Miyazaki

Koichi Saji

Hisao Tanaka

Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHClF(wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234without losing excellent etching characteristics of HFO-1234

Dry etching agent composition and dry etching method

A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution.

Silicon dry etching method

Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt.

Method for synthesizing fluorine compound by electrolysis and electrode therefor

Disclosed is an etching gas provided containing CHFCOF. The etching gas may contain, as an additive, at least one kind of gas selected from O, O, CO, CO, F, NF, Cl, Br, I, XF(In this formula, X represents Cl, I or Br. n represents an integer satisfying 1&#x2266;n&#x2266;7.), CH, CHF, CHF, CHF, N, He, Ar, Ne, Kr and the like, from CH, CH, CH, CH, CH, CH, CH, HI, HBr, HCl, CO, NO, NH, Hand the like, or from CH, CHF, CHFand CHF. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CFthat places a burden on the environment.

Etching gas

A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CFC&#x2261;CX where X is H, F, Cl, Br, I, CH, CFHor CFH; and either of: (B) at least one kind of gas selected from the group consisting of O, O, CO, CO, COCland COF; (C) at least one kind of gas selected from the group consisting of F, NF, Cl, Br, Iand YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF, CHF, CF, CFH, CFH, CF, CFH, CClFH and CF. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

Dry etching agent and dry etching method using the same

There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF, BrF, BrF, IFand IF; and F. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.

Dry etching method

A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H, O, O, CO, CO, COCl, COF, CFOF, NO, F, NF, Cl, Br, I, CH, CH, CH, CH, CH, CH, CH, HF, HI, HBr, HCl, NO, NHand YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1&#x2266;n&#x2266;7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.

Dry etching agent and dry etching method

A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with &#x3b2;-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and &#x3b2;-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to &#x3b2;-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.

Dry cleaning method of substrate processing apparatus

Disclosed is a method for producing an oxygen-containing halogenated fluoride, wherein a gas-liquid reaction is used. This method is a method for producing an oxygen-containing halogenated fluoride represented by the general formula: XOF (where X represents a halogen atom (Cl, Br or I) constituting a halogen fluoride and m represents 3 or 4), wherein a mixed gas containing the halogen fluoride and fluorine is reacted with an HO source.

Method for producing oxygen-containing halogenated fluoride

The invention relates to a process for producing carbonyl difluoride. This process includes the steps of (a) reacting carbon monoxide with a first metal fluoride in a reactor, thereby obtaining carbonyl difluoride and a second metal fluoride having in the molecule a fluorine atom number less than that of the first metal fluoride; and (b) reacting the second metal fluoride with fluorine in the reactor, thereby obtaining the first metal fluoride. The steps (a) and (b) are alternately repeated in the reactor, thereby repeatedly producing carbonyl difluoride.

Process for producing carbonyl difluoride

The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

Gas for removing deposit and removal method using same

In a receive base forming a child seat , there is disposed a set angle adjusting mechanism which, in accordance with the angle of a vehicle seat , extends a primary rotary plate or the primary rotary plate and a secondary rotary plate simultaneously in a rotating manner to thereby interpose the same between the receive base and vehicle seat . According to the present structure, the angle of the receive base can be freely set regardless of the angle of the vehicle seat . Also, the set angle adjusting mechanism may be interposed between the receive base and the seat main body of the child seat in such a manner that it is able to adjust the angle of the seat main body. An angle display device is disposed in either of the receive base or seat main body, so that the above-mentioned angle can be confirmed while setting the same. This can enhance the convenience and safety of the child seat to a great extent.

Child seat

In a receive base,forming a child seat,there is disposed a set angle adjusting mechanism,which, in accordance with the angle of a vehicle seat,extends a primary rotary plate or the primary rotary plate and a secondary rotary plate simultaneously in a rotating manner to thereby interpose the same between the receive base,and vehicle seat,According to the present structure, the angle of the receive base,can be freely set regardless of the angle of the vehicle seat,Also, the set angle adjusting mechanism,may be interposed between the receive base,and the seat main body of the child seat in such a manner that it in able to adjust the angle of the seat main body. An angle display device is disposed in either of the receive base or seat main body, so that the above-mentioned angle can be confirmed while setting the same. This can enhance the convenience and safety of the child seat to a great extent.

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Ube, Japan

Isamu Mori