Asahi Glass Company, Limited

Agc Seimi Chemical Co., Ltd.

Canon Kabushiki Kaisha

Agc Inc.

Iori Yoshida

Satoshi Takemiya

Hiroshi Usui

Masaru Suzuki

Atsushi Hayashi

Hiroyuki Tomonaga

Yoshinori Kon

Katsuaki Miyatani

Osamu Miyahara

Kazuo Sunahara

Tomohiro Sakai

Yuzuru Tanabe

Satoshi Kashiwabara

Yoshihisa Beppu

Nobuyuki Takagi

Norihito Nakazawa

Toshihiko Otsuki

Hiroyuki Kamiya

Mitsuru Horie

Yuiko Yoshida

Junko Anzai

An image processing apparatus for processing a radiation image, includes: a reception unit configured to receive processing information obtained by processing of the radiation image by an external processing apparatus; and a display control unit configured to control displaying at least one of a reception status of the processing information and a determination result of the reception status on a display unit.

Image processing apparatus, radiation imaging system, image processing method, and non-transitory computer-readable storage medium

The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.

Single-crystal silicon-carbide substrate and polishing solution

A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.

Single crystal silicon-carbide substrate and polishing solution

A polishing agent includes a particle of a metal oxide, a water-soluble polyamide, an organic acid and water. The water-soluble polyamide has a tertiary amino group and/or an oxyalkylene chain in a molecule thereof. The polishing agent has a pH of 7 or less.

Polishing agent, polishing method and additive liquid for polishing

A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I') between a value I of an absorbance of 3566 cmand a value I&#x2032; of an absorbance of 3695 cm, and a crystallite diameter XS, is 0.08 or less.=(&#x2032;)/ A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a&#x2032;) and a lattice constant (a) measured by powder X-ray diffraction, is &#x2212;0.16% or more.(%)=(1&#x2212;&#x2032;)&#xd7;100

Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device

There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains.

Polishing method of non-oxide single-crystal substrate

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.

Polishing agent and polishing method

The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size&#xd7;the content) is in a range of from 10 to 40; and tetramethylammonium ion.

Abrasive composition and method for manufacturing semiconductor integrated circuit device

To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized. A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.

Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device

A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeOcrystal powder, the CeOcrystal powder being obtained in such a manner that a melt containing CeOis quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeOcrystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeOcrystal powder from the CeOcrystals-precipitated amorphous material.

Method for producing glass substrate for magnetic disk, and magnetic disk

To provide a technique employed when a plane to be polished of a silicon dioxide type material layer is polished in production of a semiconductor integrated circuit device, which is capable of polishing protruded portions by priority while suppressing polishing at recessed portions and planarizing the plane to be polished at a high level with an extremely small polishing amount, with small pattern dependence of the polishing rate. In production of a semiconductor integrated circuit device, when a plane to be polished is a plane to be polished of a silicon dioxide type material layer, a polishing compound containing cerium oxide particles, a water-soluble polyamine and water is used as a polishing compound for chemical mechanical polishing to polish the plane to be polished.

A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

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Tokyo, Japan

Iori Yoshida