Samsung Electronics Co., Ltd.

In-Hoi Doh

Sang-Mun Chon

Dong-Jin Park

Pil-Kwon Jun

Pil-kwon Jun

Kwang-Shin Lim

Yong-Kyun Ko

Sang-Mi Lee

Myoung-Ok Han

An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device

A passivation layer pattern having an opening is formed on a substrate having a metal wiring pattern formed thereon. The opening partially exposes an upper surface of the metal wiring pattern. A photoresist pattern is formed on the passivation layer pattern. The photoresist pattern has an opening that exposes the opening of the passivation layer pattern, and metal is electroplated in the openings to form a bump electrode. The photoresist pattern is removed using a composition including monoethanolamine and dimethylacetamide.

Composition for removing photoresist and method of forming a bump electrode in a semiconductor device using the composition

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Gyeonggi-do, South Korea

In-Hoi Doh