Japan Synthetic Rubber Co., Ltd.

Jsr Corporation

Ikuo Nozue

Yoshiyuki Harita

Yoshihiro Hosaka

Masashige Takatori

Yoshio Matsumura

Takao Miura

Osahiko Tomomitsu

Takashi Ukachi

Akihiro Yamanouchi

Satoshi Miyashita

Kiyoshi Honda

Yoshiji Yumoto

Taro Suminoe

A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymonocarboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Radiation-sensitive resin composition

A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monooxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

Radiation-sensitive resin composition utilizing monooxymonocarboxylic

A radiation-sensitive resin composition comprising a solution of an alkali-soluble resin and a radiation-sensitive compound in a solvent comprising a monoxymono-carboxylic acid ester. This composition has a high storage stability (i.e., a very small amount of fine particles are formed during storage) and is suited for use as a resist for making integrated circuits.

A radiation-sensitive resin composition comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound, wherein the alakli-soluble novolak resin comprises a mixture of: 95-50 parts by weight of Resin A having a standard polystyrene-reduced weight-average molecular weight of 2,000-20,000 �Resin A is at least one resin selected from the group consisting of a resin obtained by polycondensation of m-cresol and at least one phenol represented by the structural formula (I) or (I'): ##STR1## wherein m is 2 or 3, with at least one aldehyde and a resin obtained by polycondensation of m-cresol, p-cresol and at least one phenol represented by the above structural formula (I) or (I') with at least one aldehyde! and 5-50 parts by weight of Resin B having a standard polystyrene-reduced weight-average molecular weight of 200-2,000 �Resin B is a resin obtained by polycondensation of at least one phenol represented by the structural formula (II): ##STR2## wherein n is 0, 1, 2 or 3, with at least one aldehyde!. In the resin composition, the mixture of Resin A and Resin B may further contain Resin C which is an ester of Resin B with a 1,2-quinonediazidesulfonic acid.

Method of pattern formation utilizing radiation-sensitive resin

A radiation-sensitive resin composition comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound, wherein the alakli-soluble novolak resin comprises a mixture of:

Radiation-sensitive composition containing 1,2 quinonediazide compound,

Radiation-sensitive composition containing 1,2-quinonediazide compound,

1,2-quinonediazide containing radiation-sensitive resin composition

A positive type radiation-sensitive resin composition which comprises a 1,2-quinonediazide compound and an alkali-soluble novolac resin produced by poly-condensing phenols represented by the formulas (I) and (II) in a molar ratio of (I)/(II) of 1/99 to 100/0 with a carbonyl compound: ##STR1## wherein R.sup.1 and R.sup.2, which may be the same or different, represent hydroxyl groups, hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups, ##STR2## wherein R.sup.3, R.sup.4 and R.sup.5, which may be the same or different, represent hydrogen atoms, alkyl groups, aryl groups, aralkyl groups, alkenyl groups, halogen atoms, alkoxy groups, alkoxycarbonyl groups, aroxycarbonyl groups, alkanoyloxy groups, aroyloxy groups, acyl groups, cyano groups or nitro groups. The above positive type radiation-sensitive resin composition is excellent in dry-etching resistance, resolution and heat resistance, and appropriate as a positive type resist for producing integrated circuits in which a resist pattern is formed, and also as a positive type resist for producing a mask.

Positive type radiation-sensitive resin composition

A novel raddery organopolysilsesquioxane having lower alkyl groups and alkenyl groups as the side chains and, if necessary, having aryl groups and/or hydrogen atoms bonded as the side chains can be produced by adding water to a solution of a lower-alkyltrihalogenosilane, an alkenyltrihalogenosilane, and, if necessary, an aryltrihalogenosilane and/or a trihalogenosilane in an organic solvent, and heating the resulting mixture. The aforesaid organopolysilsesquioxane can be used for forming a patterned surface-protecting layer or insulating layer for a semiconductor device, in the form of a mixture with a compound which generates crosslinking-reaction-active species upon irradiation with light or an ionizing radiation.

Solvent-soluble organopolysilsesquioxane, process for producing the

A laddery lower alkylpolysilsesquioxane represented by the formula: ##STR1## wherein R and R' represent same or different lower alkyl groups, and n represents an average degree of polymerization, said laddery lower alkylpolysilsesquioxane having a heat-resistant thin film-formability, characterized in that 15 to 30% by weight of the lower alkylpolysilsesquioxane is occupied by the portion having a standard polystyrene-reduced molecular weight of 20,000 or less as measured by gel permeation chromatography. Said silicone resin in which R and R' are methyl is prepared by dissolving CH.sub.3 SiCl.sub.3 in a ketone or an ether, adding water to this solution with stirring to hydrolyze CH.sub.3 SiCl.sub.3, condensing the hydrolyzate and, if necessary, subjecting the resulting condensate to a treatment for adjusting the proportion of the low molecular weight portion in the product.

Laddery lower alkylpolysilsesquioxane having heat-resistant thin

Doped acetylene polymers are produced by immersing an acetylene polymer under an inert gas atmosphere in an organic solvent solution of a dopant selected from the group consisting of a platinum group metal complex, a carbonium salt, an oxonium salt and a parabenzoquinone derivative. According to this process, a doped acetylene polymer having any desired electrical conductivity can be produced and the doped acetylene polymer thus obtained has excellent properties as an organic semiconductor material for solar batteries, various sensors, etc.

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Yokkaichi, Japan

Ikuo Nozue