Samsung Electronics Co., Ltd.

Iksu Byun

Jongwoo Sun

Taemin Earmme

Sejin Oh

Jewoo Han

Dongseok Han

Seongha Jeong

Cheonkyu Lee

Changwoo Song

Moonseok Kim

A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.

Plasma processing apparatus and semiconductor device manufacturing method using the same

A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.

Method of etching at low temperature and plasma etching apparatus

Growing community of inventors

Hwaseong-si, South Korea

Iksu Byun