University of Illinois

Ik Su Chun

Xiuling Li

Placid M Ferreira

David N Ruzic

Keng Hao Hsu

Nicholas X Fang

Winston Chern

Randolph E Flauta

Edmond K C Chow

A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.

Method of forming an array of high aspect ratio semiconductor nanostructures

A method of forming a nanoscale three-dimensional pattern in a porous semiconductor includes providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film, where the metal pattern has at least one lateral dimension of about 100 nm or less in size. Semiconductor material is removed from below the nanoscale metal pattern to create trenches in the film having a depth-to-width aspect ratio of at least about 10:1, while pores are formed in remaining portions of the film adjacent to the trenches. A three-dimensional pattern having at least one nanoscale dimension is thus formed in a porous semiconductor, which may be porous silicon. The method can be extended to form self-integrated porous low-k dielectric insulators with copper interconnects, and may also facilitate wafer level chip scale packaging integration.

Method of forming nanoscale three-dimensional patterns in a porous material

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Ik Su Chun