The University of Queensland

Rohm & Haas Electronic Materials LLC

Idriss Blakey

Andrew Keith Whittaker

Peter Trefonas, Iii

James W Thackeray

Ke Du

Meiliana Siauw

Ya-Mi Chuang

Kevin Stanley Jack

A copolymer is prepared by the polymerization of monomers that include an ultraviolet absorbing monomer, and a base-solubility-enhancing monomer. The copolymer is useful for forming a topcoat layer for electron beam and extreme ultraviolet lithographies. Also described are a layered article including the topcoat layer, and an associated method of forming an electronic device.

Copolymer and associated layered article, and device-forming method

A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.

Block copolymer and associated photoresist composition and method of forming an electronic device

A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C-Ccarboxylic acid or a salt thereof, a substituted or unsubstituted C-Camino acid or a salt thereof, a substituted or unsubstituted C-Cdialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); 

Nanoparticle-polymer resists

The present invention relates to a method for modifying line edge roughness on a lithographically-produced feature in a material, the method comprising applying a block copolymer to an area on the feature having line edge roughness, the block copolymer comprising a charged hydrophilic polymer block and a non-charged hydrophilic polymer block.

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Clayfield, Australia

Idriss Blakey