Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Ichiro Tachibana

Naomasa Suzuki

Mitsugu Sato

Muneyuki Fukuda

Atsuko Fukada

Tomoyasu Shojo

Hiroshi Tsuji

Takanori Kishimoto

Hiroyuki Ito

Katsunori Onuki

Kouji Ishiguro

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

Charged particle beam device

When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant.

Provided is a charged particle radiation device enabling suppression of both inclination and vertical vibration of a charged particle optical lens barrel, with a simple configuration. A charged particle radiation device according to the present invention includes a vibration damping member () including viscoelastic material sheets (A andB) sandwiched by support plates (A andB), and is configured so that a plane including a sheet surface of each viscoelastic material sheet is not perpendicular to a center axis of the charged particle optical lens barrel.

Charged particle radiation device

Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber () for disposing a sample () therein, a charged particle radiation optical lens tube () for irradiating the sample () with charged particle radiation (), ion pumps () for evacuating the charged particle radiation optical lens tube (), a frame () fixedly attached to the sample chamber (), the frame () facing one end of each of the ion pumps (), and vibration absorbers provided between the frame () and the one end of each of the ion pumps (), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet () sandwiched between metal plates ().

An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E&#xd7;B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

Electron beam apparatus and electron beam inspection method

A scanning electron microscope capable of modifying the focal position of a condenser lens with high speed and high reproducibility in order that low-magnification images are obtained at large depths of focus and that high-magnification images are obtained at high resolution. The microscope has a specimen-holding portion, an electron beam source, a condenser lens for converging the electron beam, an objective lens for focusing the converged beam into a very small spot onto a specimen, scan coils, a detector for detecting a specimen signal emanating from the specimen, and a display portion for displaying the detected specimen signal as an image. An axisymmetric electrode is disposed within the magnetic field produced by the condenser lens. A voltage is applied to the electrode.

Scanning electron microscope and method of imaging an object by using the scanning electron microscope

An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like. Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.

The present invention was made in view of a problem of an electron microscope in which a reduction in detection efficiency of electrons detected by a detector should be prevented by eliminating any influence of a leakage magnetic field through a gap in an objective lens onto the electrons emitted from a specimen. To solve the problem, the present invention provides an electron microscope having a configuration with: a pole piece electrode for accelerating primary electrons emitted at an electrons source; and an objective lens including the pole piece electrode. In the objective lens, an electrically and magnetically insulated gap is formed between the pole piece electrode and other pole piece, and an auxiliary coil is concentrically disposed with the objective lens at a middle position between the gap and a detection surface of the electron detector, with an electric current flowing through the auxiliary coil in the opposite direction from that of an electric current flowing through the objective lens coil.

Scanning electron microscope

A scanning electron microscope, by which an image of unevennesses on the surface of a sample may be obtained in a high-resolution manner and a high contrast one, is provided according to the present invention. A sample image is obtained by use of the scanning electron microscope with a configuration in which a positive voltage is applied in order to accelerate a primary electron beam, and an electric field shielding plate, a magnetic field shielding plate, or an electromagnetic field shielding plate is arranged on the upper side of an object lens.

Growing community of inventors

Hitachinaka, Japan

Ichiro Tachibana