Ebara Corporation

Ichiro Katakabe

Akira Fukunaga

Shinya Morisawa

Sachiko Kihara

Haruko Ohno

Yuki Inoue

Sachiko Takeda

Haruko Ono

Kenya Ito

Takayuki Saito

Masaya Seki

Akihisa Hongo

Kaoru Yamada

Shinji Kajita

Masayuki Kamezawa

Sumio Yabe

An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Apparatus for and method of processing substrate

A substrate processing apparatus and a substrate processing method is provided for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. A substrate holding apparatus is provided for holding and rotating a substrate. The substrate processing apparatus for processing a substrate while supplying a fluid to the substrate includes a substrate holder for holding and rotating the substrate, and a holder suction unit for sucking the fluid from the substrate holder. The substrate holding apparatus includes a plurality of rollers which are brought into contact with an edge portion of a substrate so as to hold and rotate the substrate, and at least one moving mechanism for moving the rollers.

Substrate processing apparatus, substrate processing method, and substrate holding apparatus

A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Substrate processing method

A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of roation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.

Revolution member supporting apparatus and semiconductor substrate processing apparatus

There is provided a method and apparatus for etching a ruthenium film which can sufficiently etch away a ruthenium film formed on or adhering to the peripheral region, especially a no-device-formed region, backside or other portions of a substrate. The method comprises etching a ruthenium film formed on a substrate with a chemical liquid having a pH of not less than 12 and an oxidation-reduction potential of not less than 300 mVvsSHE.

Method and apparatus for etching ruthenium films

An apparatus continuously supplies an acid solution to a central portion of a surface of a substrate while the substrate is rotating, and also supplies an oxidizing agent solution continuously or intermittently to a periphery of the substrate. In addition, the apparatus supplies an oxidizing agent solution and an acid solution either simultaneously or alternately to a reverse side of the substrate.

Method of and apparatus for cleaning substrate

An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate. In addition, an oxidizing agent solution and an acid solution are simultaneously or alternately supplied to a reverse side of the substrate.

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Tokyo, Japan

Ichiro Katakabe